Dual stress liner enhancement in hybrid orientation technology

Sheraw, C.; Yang, Min; Fried, D.; Costrini, G.; Kanarsky, T.; Lee, W.-H.; Chan, V.; Fischetti, Massimo V.; Holt, J.; Black, L.; Naeem, Muhammad Salman; Panda, Soumya Ranjan; Economikos, Laertis; Groschopf, J.; Kapur, A.; Li, Y.; Mo, R.; Bonnoit, Alyssa; Degraw, Danielle; Luning, S.; Chidambarrao, D.; Wang, X.; Bryant, A.; Brown, D.; Sung, C.Y.; Agnello, P.; Ieong, M.; Huang, Shih-Fen; Chen, X.; Khare, Mukesh

doi:10.1109/.2005.1469192

Cited by 18 publications

(5 citation statements)

References 2 publications

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“…A direct way to introduce stress in a MOSFET's channel is to fill the source and drain regions with SiGe [23,24] for p-channel MOSFETs and with SiC for n-channel MOSFTEs [25,26]. Additional uniaxial stress is often introduced by growing compressive or tensile capping layers [27][28][29]. The advantage of local stress techniques is that they can be combined [30] and superimposed [31] on the same wafer.…”

Section: Strain Engineering Techniquesmentioning

confidence: 99%

Modeling of modern MOSFETs with strain

et al. 2009

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We review modeling techniques used to compute strain induced performance enhancement of modern MOSFETs. While p-channel MOSFETs were intensively studied, electron transport in strained structures received surprisingly little attention. A rigorous analysis of the subband structure in thin silicon films under stress is performed. Calculated subband effective masses are shown to strongly depend on shear strain and film thickness. A decrease of the transport effective mass under tensile stress in [110] direction and an additional splitting between the unprimed subbands with the same quantum number guarantees a mobility enhancement even in ultra-thin (001) silicon films. This increase of mobility and drive current combined with the improved channel control makes multi-gate MOSFETs based on thin films or silicon fins preeminent candidates for the 22 nm technology node and beyond.Keywords MOSFETs modeling · Shear strain · Two-band k·p model for conduction band · Valley splitting · Mobility and current enhancement

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Section: Strain Engineering Techniquesmentioning

confidence: 99%

Modeling of modern MOSFETs with strain

et al. 2009

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“…Fabricating PMOS transistors on a (110) and NMOS transistors on a (100) surface orientations will enhance CMOS performance significantly. Monolithic integration of (110) PMOS and (100) NMOS has been demonstrated with the use of Hybrid Orientation Technology (HOT) [12,13]. Short channel devices and circuits that were fabricated using (110) surface demonstrated a gain of about 20% in the drive current for PMOS with gate length of 50 nm.…”

Section: Dual Channel Engineeringmentioning

confidence: 99%

Substrate Engineering for 32nm and Beyond

2009

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“…Recently, channel engineering techniques, such as introducing strain, 1) incorporating Ge, 2) and using different substrate orientations, 3,4) to improve the performance of field effect transistors (FETs) have attracted a great deal of interest. In the case of substrate orientation, it has been shown that the electron mobility of n-type metal-oxidesemiconductor (n-MOSFETs) is highest in Si(100), whereas the hole mobility of p-MOSFETs is maximum in Si(110).…”

Section: Introductionmentioning

confidence: 99%

Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations

Kasahara

Uchitomi

Shimizu

et al. 2008

jjap

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We report a comparative study of the quantal and classical treatments of single-electron charge transfer from the L and K shells of Li(ls22s) in collisions with He2+ ions at intermediate energies. Quantal calculations have been performed using coupledstate atomic orbital expansions with up to 43 pseudostates in the basis, within the impact parameter formalism, for impact energies of 8 to 2000 keV lab. Classical trajectory Monte Carlo calculations for L-shell capture, using a model potential for the active electron, have been performed for impact energies from 50 to 400 keV, and using an effective-charge model for K-shell capture at impact energies from 600 to 2000 keV lab. The quantal results are in close agreement with experiment over the whole energy range for the total capture cross section. The classical results give a good account of the shape of the cross section curve and are everywhere within *30% of the quantal values. A simple binning model applied to the classical results yields cross sections for capture into final n states which are in agreement with the quantal ones to the same accuracy.

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Dual stress liner enhancement in hybrid orientation technology

Cited by 18 publications

References 2 publications

Modeling of modern MOSFETs with strain

Modeling of modern MOSFETs with strain

Substrate Engineering for 32nm and Beyond

Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations

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