Dual Material Tri-Gate Schottky Barrier MOSFET

Rashid, Shazia; Bashir, Faisal; Khanday, Farooq Ahmad; Beigh, M. Rafiq

doi:10.1109/icears53579.2022.9751984

Cited by 1 publication

(3 citation statements)

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“…When there are no biomolecules, the control over gate is weak; therefore, selecting a gate metal of low work function leads to the change in dielectric constant that in turn changes drain current sensitivity. It is evident from the graph that as the dielectric constant increases; the drain current also increases 30 . Figure 5 shows the change in tunneling width with respect to change in dielectric constant for conventional and proposed TFET.…”

Section: Resultsmentioning

confidence: 97%

“…It is evident from the graph that as the dielectric constant increases; the drain current also increases. 30 Figure 5 shows the change in tunneling width with respect to change in dielectric constant for conventional and proposed TFET. The change in the tunneling width occurs in both neutral as well as charged biomolecules.…”

Section: Resultsmentioning

confidence: 99%

“…Transconductance represents the control of gate voltage over the drain current in an FET. 30 More the transconductance, better the control of gate voltage over flow of the drain current in the FET From Figure 7B, it can be seen that transconductance, g m also increases with increase in dielectric constant due to the fact that ON current increases on increasing dielectric constant. This is calculated using Equation (2).…”

Section: Sensitivity Analysis For Neutral Biomoleculesmentioning

confidence: 99%

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Dielectrically modulated hetero‐material double gate tunnel field‐effect transistor for label free biosensing

Shakeel,

Rashid,

Khanday

et al. 2024

Int J Numerical Modelling

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This work proposes a novel double gate hetero‐material tunnel field effect transistor for label free biosensing applications. The device consists of III‐V semiconductor gallium arsenide (GaAs) which serves as a substrate. Source and drain regions made of Germanium are used due to its compatibility with GaAs. Cavities of 15 × 1.5 nm are created near source‐channel junctions for the biomolecules to be placed in. The ION sensitivity of 2.23 × 106 for neutral biomolecules has been obtained from 2D simulations using ATLAS TCAD software. Furthermore, transconductance sensitivity of 2.27 × 106, ION/IOFF sensitivity of 2.46 × 105, subthreshold swing (SS) sensitivity of 28.6 mV/decade and threshold voltage sensitivity of 1.2 mV for neutral biomolecules is obtained. The ION sensitivity of 3.93 × 106 and 1.42 × 106 for positively and negatively charged biomolecules respectively has been obtained. Also, SS sensitivity of 28.3 and 28.8 mV/decade for positively and negatively charged biomolecules respectively has been observed. ION sensitivity shows that the proposed device is 1000× better than the conventional one.

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%