Dual-frequency CMOS terahertz detector with silicon-based plasmonic antenna

Huang, Ruizhi; Ji, Xiaoli; Liao, Yanling; Peng, Jingyu; Wang, Ke; Xu, Yue; Yan, Feng

doi:10.1364/oe.27.023250

Cited by 15 publications

(12 citation statements)

References 22 publications

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“…Indeed, the sensitivity limit is calculated as 45 fWHz −1/2 by designing superior‐series PTE coupling: semiconducting CNT films and Bi 2 Te 3 and referring their ZT values ( ZT Semi ‐ CNT film = 0.33, ZT Mixed‐CNT film = 0.03, ZT Bi2Te3 = 1, and ZT Bi = 0.1). [ 27–29 ] In addition, as represented by the experimentally obtained minimum NEP, our CNT film PTE sensor exhibits the photodetection sensitivity comparable with those of cutting‐edge uncooled nonvacuum photodetectors [ 30–38 ] in the broadband frequency region ranging from MMW to visible light.…”

Section: Introductionmentioning

confidence: 62%

Series Photothermoelectric Coupling Between Two Composite Materials for a Freely Attachable Broadband Imaging Sheet

Suzuki

Kawano

2021

Advanced Photonics Research

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As flexible wearable sensors and imagers are receiving attention from diverse social sectors, the freely attachable photothermoelectric (PTE) conversion technique should be evaluated to develop a highly usable safety sensor network. Although carbon nanotube (CNT)‐related materials should be effective, the key parameters/structures that maximize PTE conversion have not been clarified, thus hindering optimum device design and practical use. Herein, the flexible, sensitive broadband photodetection operation based on a coupling configuration between the CNT film photo/heat/electron channel and metal electrode is evaluated. Experimental PTE measurements and steady‐state thermal distribution simulations reveal that a series coupling of a p‐type CNT film channel and a highly negative Seebeck coefficient counter metal electrode facilitate superior photodetection performances than those of a parallel coupling configuration. Furthermore, subsequent device designs provide sensitive broadband photodetection from the millimeter‐wave to visible light wavelength regions with a minimum noise equivalent power of 5 pWHz−1/2 in an uncooled nonvacuum condition. Simultaneously, the mechanical flexibility of the proposed photodetector allows for its use in freely attachable sheet imager applications on curvilinear objects, and the nondestructive 3D photomonitoring of a defective intricately bent sample is demonstrated.

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Section: Introductionmentioning

confidence: 62%

Series Photothermoelectric Coupling Between Two Composite Materials for a Freely Attachable Broadband Imaging Sheet

Suzuki

Kawano

2021

Advanced Photonics Research

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“…Plasmonic photodetectors, on the other hand, enable fast and efficient detection and demodulation of optical signals [206,207]. In this context, plasmonic nanoantennas can also be used to downscale conventional semiconductor photodetectors-of high importance for THz and infrared detection [208,209]. A hybrid plasmonic silicon-graphene waveguide photodetector device [210], for light detection at 1.55 µm, is depicted in Figure 4h.…”

Section: Plasmonic Filters Switches Routers and Photodetectorsmentioning

confidence: 99%

Plasmonics for Telecommunications Applications

Carvalho

Mejía‐Salazar

2020

Sensors

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Plasmonic materials, when properly illuminated with visible or near-infrared wavelengths, exhibit unique and interesting features that can be exploited for tailoring and tuning the light radiation and propagation properties at nanoscale dimensions. A variety of plasmonic heterostructures have been demonstrated for optical-signal filtering, transmission, detection, transportation, and modulation. In this review, state-of-the-art plasmonic structures used for telecommunications applications are summarized. In doing so, we discuss their distinctive roles on multiple approaches including beam steering, guiding, filtering, modulation, switching, and detection, which are all of prime importance for the development of the sixth generation (6G) cellular networks.

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“…In addition, passive devices are more suitable for human vision and image processing due to the advantages of diffuse and natural illumination compared to active devices [24]. The dual-frequency detectors composed of antennas and MOSFETs in [9] and [10] achieves better characteristics results while operation at higher frequencies is desirable for better spatial resolution. The multi-band detectors in [11] and [12] achieve wideband detection, but they are made up of multiple discrete antenna elements in different sizes coupled with multiple FETs, which inevitably results in low integration levels, large chip area occupation, and expensive cost.…”

Section: Summary and Comparisonsmentioning

confidence: 99%

Uncooled CMOS Integrated Triple-Band Terahertz Thermal Detector Comprising of Metamaterial Absorber and PTAT Sensor

Wang

2020

IEEE Access

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This paper presents an uncooled monolithic resonant triple-band terahertz (THz) thermal detector using a 55 nm complementary metal oxide semiconductor (CMOS) process. The novel integration of a compact triple-band metamaterial (MM) absorber coupled with a sensitive proportional to absolute temperature (PTAT) sensor leads to a compact, uncooled, cost-effective, easy-integration, and massproduction CMOS integrated triple-band THz thermal detector. The principles of operation and physical modeling such as selective absorption of electromagnetic energy, thermal energy conversion, and electrical response are demonstrated. The triple-band MM absorber achieves high absorption magnitudes of 90.4%, 96.8%, and 98.8% at 0.91, 2.58, and 4.3 THz respectively. The optimized PTAT sensor shows a high temperature coefficient of voltage of 10.11 mV/℃. Simulated responsivities are 37.28 V/W at 0.91 THz, 49.9 V/W at 2.58 THz, and 61.11 V/W at 4.3 THz. The proposed triple-band THz thermal detector shows calculated noise equivalence powers (NEPs) of 1.07, 1.6, and 1.31 μW/Hz 0.5 at 0.91, 2.58, and 4.3 THz respectively. Relatively better experimental results are obtained at 0.91 THz and 2.58 THz due to the scarcity of THz sources. The proposed detector achieves maximum responsivities of 33.4 V/W and 47.9 V/W, while minimum NEPs of 1.49 μW/Hz 0.5 at 0.91 THz with a modulation frequency of 2 Hz, and 1.88 μW/Hz 0.5 at 2.58 THz with a modulation frequency of 0.5 Hz.

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Dual-frequency CMOS terahertz detector with silicon-based plasmonic antenna

Cited by 15 publications

References 22 publications

Series Photothermoelectric Coupling Between Two Composite Materials for a Freely Attachable Broadband Imaging Sheet

Series Photothermoelectric Coupling Between Two Composite Materials for a Freely Attachable Broadband Imaging Sheet

Plasmonics for Telecommunications Applications

Uncooled CMOS Integrated Triple-Band Terahertz Thermal Detector Comprising of Metamaterial Absorber and PTAT Sensor

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