Dual Coaxial Probes in Transmission Inserted by Dielectric With Two Different Thicknesses to Extract the Material Complex Relative Permittivity: Discontinuity Impacts
Abstract:After a thorough investigation, this paper introduces a novel and simple radiofrequency material characterization technique. For this study's purposes, two probes were developed and separated by the sample under test (SUT) with an inhomogeneous test cell. Furthermore, the discontinuity impacts at the probe, SUT interfaces, were also studied. The investigation uses the transmission process through the principle of two different SUT thicknesses to measure its relative permittivity and loss tangent. The technique… Show more
“…The literature is rich enough in the deep details of the methods involved [1,2]. This domain is classified into two leading families: destructive or non-destructive [3,4], resonant or non-resonant [5], one or two accesses [6], broadband or narrowband [7][8][9], and distributed or lumped elements. However, these two large groups present six primary approaches or methods for accessing the test sample's intrinsic parameters.…”
Section: Introductionmentioning
confidence: 99%
“…The material intrinsic parameters are the central column mapping the material's ability to react under the excitation of an electromagnetic wave. Thereby, the probe (in transmission or reflection) [7,10,11], free-space (antenna or ellipsometry) [12][13][14], cavity [15][16][17][18], parallel plates capacitor (MIM) [19][20][21], inductive (spiral approach) [22,23], and transmission line (stub, short-circuit, waveguide, etc) [24][25][26]. All these methods are based on the perturbation [27][28][29] of the electromagnetic field lines in the insertion environment of the sample to be characterized.…”
Section: Introductionmentioning
confidence: 99%
“…As several publications work for [11][12][13], an open-coaxial-ended probe is used for wafer material instead of liquid. The novelty of the proposed approach is carried out by removing the effects of the interfaces because of the variation of the thickness [7,28], and the mathematical definition of the capacitor, allowing us to go back to the intrinsic parameters of the MUT. Scanning a frequency range from 1 MHz to 2.2 GHz with an Anritsu MS4642B 20 GHz vector network analyzer (VNA), the suggested approach has been experimentally validated with Alumina 99.5% and FR-4 HTG-175.…”
This paper discusses a new approach to determining the material electric parameters (dielectric constant and dissipation factor) through a technique based on identical material variation thicknesses. The copper bowl controls the material thicknesses and allows quick and safe measurements to get to the electromagnetic material information. This approach assumes that the discontinuities generated at the probe and bowl are identical and removed through mathematical operations. The material under test (MUT) gap thickness doesn’t exceed one millimeter. Some formulations have been developed to determine the discontinuity condensers and both capacitors of each thickness. Two proposed developments have been given to extract the complex effective and relative permittivities. A mathematical formula has been proposed to ensure the transition from effective to intrinsic parameters, where the MUT thicknesses and the probe’s outer diameter of the inner conductor are considered. A de-embedding operation is necessary, and the method is suitable but not limited to low-k. The coaxial probe is flat terminated, and the experimental validation has been made in the frequency ranges 1 MHz – 2.2 GHz for FR-4 HTG-175 and 1 MHz – 0.8 GHz for Alumina 99.5%. All MUTs are cm2, except their thicknesses. The suggested approach is straightforward in sample insertion, simple in its data acquisition and implementation, and precise in the final parameters' results.
“…The literature is rich enough in the deep details of the methods involved [1,2]. This domain is classified into two leading families: destructive or non-destructive [3,4], resonant or non-resonant [5], one or two accesses [6], broadband or narrowband [7][8][9], and distributed or lumped elements. However, these two large groups present six primary approaches or methods for accessing the test sample's intrinsic parameters.…”
Section: Introductionmentioning
confidence: 99%
“…The material intrinsic parameters are the central column mapping the material's ability to react under the excitation of an electromagnetic wave. Thereby, the probe (in transmission or reflection) [7,10,11], free-space (antenna or ellipsometry) [12][13][14], cavity [15][16][17][18], parallel plates capacitor (MIM) [19][20][21], inductive (spiral approach) [22,23], and transmission line (stub, short-circuit, waveguide, etc) [24][25][26]. All these methods are based on the perturbation [27][28][29] of the electromagnetic field lines in the insertion environment of the sample to be characterized.…”
Section: Introductionmentioning
confidence: 99%
“…As several publications work for [11][12][13], an open-coaxial-ended probe is used for wafer material instead of liquid. The novelty of the proposed approach is carried out by removing the effects of the interfaces because of the variation of the thickness [7,28], and the mathematical definition of the capacitor, allowing us to go back to the intrinsic parameters of the MUT. Scanning a frequency range from 1 MHz to 2.2 GHz with an Anritsu MS4642B 20 GHz vector network analyzer (VNA), the suggested approach has been experimentally validated with Alumina 99.5% and FR-4 HTG-175.…”
This paper discusses a new approach to determining the material electric parameters (dielectric constant and dissipation factor) through a technique based on identical material variation thicknesses. The copper bowl controls the material thicknesses and allows quick and safe measurements to get to the electromagnetic material information. This approach assumes that the discontinuities generated at the probe and bowl are identical and removed through mathematical operations. The material under test (MUT) gap thickness doesn’t exceed one millimeter. Some formulations have been developed to determine the discontinuity condensers and both capacitors of each thickness. Two proposed developments have been given to extract the complex effective and relative permittivities. A mathematical formula has been proposed to ensure the transition from effective to intrinsic parameters, where the MUT thicknesses and the probe’s outer diameter of the inner conductor are considered. A de-embedding operation is necessary, and the method is suitable but not limited to low-k. The coaxial probe is flat terminated, and the experimental validation has been made in the frequency ranges 1 MHz – 2.2 GHz for FR-4 HTG-175 and 1 MHz – 0.8 GHz for Alumina 99.5%. All MUTs are cm2, except their thicknesses. The suggested approach is straightforward in sample insertion, simple in its data acquisition and implementation, and precise in the final parameters' results.
“…The Q-factor is also used to mismatch the system at the chosen frequency f 0 and create a notched band. The microstrip technology [53] is used with a mono-layer of FR4 HTG-175 having thickness 1-mm where the dielectric constant ε r = 4.4 and loss tangent tan δ = 0.02 [54]. As reported in other works [55], we present results in terms of return loss (RL), insertion loss (IL), attenuation coefficient (AC), fractional bandwidth (FBW), center frequency (CF), and prototype's size surface (S).…”
Designing a multi-band bandpass filter (BPF) with controllable bandwidths is an alternative process to several technologies suggested by researchers. Hence, this paper presents a tri-band BPF in microstrip technology where T-shaped short-and-open stubs have alternating positions to use the maximally flat theory, based on the overall ABCD parameters of the circuit. The combination of the design Q-factor and operating frequency to mismatch the design is the technique basis. The proposed structure comprises quarter wavelength (λ/4) line section to develop a tri-band BPF frequency. All stubs are symmetrical relative to the center axis, while the prototype has been fabricated on a wafer of 22.42 × 7.62 mm 2 . Using an FR4 HTG-175 with a thickness 1-mm, dielectric constant ε r = 4.4, and loss tangent tan δ = 0.02, the (4.06-4.283) GHz, (5.877-6.408) GHz,) GHz are obtained referring to a 10-dB of the return loss. In contrast, the insertion losses at the center frequencies are 2.107/1.354/4.08 dB and the fractional bandwidths of 2.134%, 5.346%, and 8.645%, respectively. This covers WAS (including RLAN), ISM, and 5G applications. However, the attenuation coefficient is between 1.326 dB and 4.368 dB. The tri-band BPF prototype was validated using the Anritsu MS4642B 20 GHz Vector Network Analyzer. The measured and E-simulated results have been compared with good agreement.
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