Abstract:Two-dimensional (2D) semiconductors have attracted considerable attention in recent years. However, to date, there is still no effective approach to produce large-scale monolayers while retaining their intrinsic properties. Here, we report a simple mechanical exfoliation method to produce large-scale and high-quality 2D semiconductors, by designing an atomically flat Au-mesh film as the peeling tape. Using our prefabricated mesh tape, the limited contact region (between the 2D crystal and Au) could provide eno… Show more
“…[11] Flakes produced via this method have already been used in multiple applications including gas sensing, [13] photodetection, [14,15] and heterostructure arrays. [16,17] It has been claimed that the stronger Au/2D TMD interfacial interaction or binding energy (BE) of the top layer overcomes the weaker interlayer van der Waals (VdW) forces between the top layers and subsequent layers in TMD materials, thereby leaving behind largearea ML flakes. [9,12,18] The origin of stronger Au/2D TMDs is due to the well-known affinity of Au towards chalcogen atoms and is well studied in self-assembling monolayers (SAM) formation.…”
Au‐mediated exfoliation of 2D transition‐metal dichalcogenides (TMDs) has received significant attention due to its ability to produce large‐area monolayer (ML) flakes. This process has been attributed to strong TMD/Au binding energy (BE) as well as the uniform strain between the TMDs and Au. However, large‐area exfoliation of TMDs with other metals that have even stronger theoretical BE than Au/TMD is not successful, leading to question whether the BE plays any role in the exfoliation process. Here, successful demonstration of large‐area ML MoS2 using Cu, Ni, and Ag with various predicted strain, including Pd with almost no strain, but stronger BE than Au/MoS2 is demonstrated. Optical micrographs show MoS2 flakes with 100s of µm in size with a yield of several tens to hundreds of ML flakes per exfoliation. Photoluminescence and Raman spectroscopy confirm the ML nature of the flakes, while electrical transport measurements show mobilities of ≈6 cm2 V−1 s−1 with a current on‐off ratio ≈108 consistent with high‐quality ML MoS2. Given that MoS2 can be exfoliated with metals that have strong BE irrespective of their strain values suggests that BE is the primary mechanism in successful exfoliation of large‐area ML MoS2.
“…[11] Flakes produced via this method have already been used in multiple applications including gas sensing, [13] photodetection, [14,15] and heterostructure arrays. [16,17] It has been claimed that the stronger Au/2D TMD interfacial interaction or binding energy (BE) of the top layer overcomes the weaker interlayer van der Waals (VdW) forces between the top layers and subsequent layers in TMD materials, thereby leaving behind largearea ML flakes. [9,12,18] The origin of stronger Au/2D TMDs is due to the well-known affinity of Au towards chalcogen atoms and is well studied in self-assembling monolayers (SAM) formation.…”
Au‐mediated exfoliation of 2D transition‐metal dichalcogenides (TMDs) has received significant attention due to its ability to produce large‐area monolayer (ML) flakes. This process has been attributed to strong TMD/Au binding energy (BE) as well as the uniform strain between the TMDs and Au. However, large‐area exfoliation of TMDs with other metals that have even stronger theoretical BE than Au/TMD is not successful, leading to question whether the BE plays any role in the exfoliation process. Here, successful demonstration of large‐area ML MoS2 using Cu, Ni, and Ag with various predicted strain, including Pd with almost no strain, but stronger BE than Au/MoS2 is demonstrated. Optical micrographs show MoS2 flakes with 100s of µm in size with a yield of several tens to hundreds of ML flakes per exfoliation. Photoluminescence and Raman spectroscopy confirm the ML nature of the flakes, while electrical transport measurements show mobilities of ≈6 cm2 V−1 s−1 with a current on‐off ratio ≈108 consistent with high‐quality ML MoS2. Given that MoS2 can be exfoliated with metals that have strong BE irrespective of their strain values suggests that BE is the primary mechanism in successful exfoliation of large‐area ML MoS2.
“…For 2D heterostructures, dry and polymer-assisted transfers are the most popularly used techniques in mechanically exfoliated 2D materials, liquid-phase-exfoliated 2D materials (Figure b–f and Figure ) (integrated inductively coupled plasma (ICP))/CVD grown-2D materials at micro-and millimeter-size (Figure b-f and Figure ), ,− roll-to-roll-assisted 2D materials, , face-to-face-assisted 2D materials, bubbling transfer-assisted 2D material at millimeter size, mechanically exfoliated 2D material at full wafer size (centimeter), and a quasi-dry transfer of 2D heterostructures through layer-resolved splitting (LRS) (Figure a–c). − Both methods can be used to stack more than two layers of the same or different 2D materials. Polymer residues in both techniques, especially polymer-assisted techniques, dope the 2D material and significantly change the function of a device.…”
Section: Fabrication and Characterization Techniques
Of 2d Heterostru...mentioning
A grand family of
two-dimensional (2D) materials and their heterostructures
have been discovered through the extensive experimental and theoretical
efforts of chemists, material scientists, physicists, and technologists.
These pioneering works contribute to realizing the fundamental platforms
to explore and analyze new physical/chemical properties and technological
phenomena at the micro–nano–pico scales. Engineering
2D van der Waals (vdW) materials and their heterostructures via chemical
and physical methods with a suitable choice of stacking order, thickness,
and interlayer interactions enable exotic carrier dynamics, showing
potential in high-frequency electronics, broadband optoelectronics,
low-power neuromorphic computing, and ubiquitous electronics. This
comprehensive review addresses recent advances in terms of representative
2D materials, the general fabrication methods, and characterization
techniques and the vital role of the physical parameters affecting
the quality of 2D heterostructures. The main emphasis is on 2D heterostructures
and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical
responses in the optical, valley, and topological states. Finally,
we discuss the universality of 2D heterostructures with representative
applications and trends for future electronics and optoelectronics
(FEO) under the challenges and opportunities from physical, nanotechnological,
and material synthesis perspectives.
“…Large-scale, periodic array of vdW heterojunctions can be produced recently. [231][232][233] Photodetectors using the heterojunction arrays were also demonstrated with reasonable performance. Additionally, as shown in Figure 5f, vdW heterostructures made of multiple kinds of 2D materials can also be explored for photodetection, demonstrating gate-tunable photodiode behavior.…”
2D materials show wide-ranging physical properties with their electronic bandgaps varying from zero to several electronvolts, offering a rich platform to explore novel electronic and optoelectronic functions. Notably, atomically thin 2D materials are well suited for integration in optoelectronic circuits, because of their ultrathin body, strong light-matter interactions, and compatibility with the current silicon photonic technology. In this paper, an overview of the state of the art of using 2D materials in optoelectronic devices and integration is provided. The optoelectronic properties of 2D materials and their typical electronic and optoelectronic applications including light sources, optical modulators, photodetectors, field-effect transistors, and logic circuits are summarized. The device configurations, operation mechanisms, and device figures-of-merit are introduced and discussed. By discussing the recent advances, future trends, and existing challenges of 2D materials and their optoelectronic devices, this review has provided an insight into the perspectives of 2D materials for optoelectronic integration and may guide the development of this field within the research community.
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