Dry etching of TiN in N2/Cl2/Ar adaptively coupled plasma

Kim, Dong‐Pyo; Woo, Jong‐Chang; Baek, Kyu‐Ha; Park, Kun-Sik; Lee, Ki-Jun; Kim, Kwangsoo; Do, Lee‐Mi

doi:10.1016/j.vacuum.2011.08.002

Cited by 4 publications

(2 citation statements)

References 28 publications

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“…10,22 Cl radicals react with Ti and N to produce TiCl x and NCl x products, which can be volatile products with the assistance of ion bombardment. It has been reported that N 2 addition in chlorine plasmas can either increase or decrease TiN etch rate depending on the plasma conditions; 6,8,10 however, no clear explanation has been given regarding the role of N 2 . In our experiments, TiN etch rate decreases as N 2 flow rate increases.…”

Section: B Effect Of N 2 Gas Flow On Etch Rates and Nonvolatile Resimentioning

confidence: 99%

“…Dry etching characteristics of TiN thin films with halogen gases (CHF 3 , BCl 3 , and Cl 2 ) and additional gases (Ar, N 2 , O 2 , and He) have been widely investigated. [6][7][8][9][10][11] The Cl-based plasmas are more commonly used than F-based plasmas due to the lower boiling point of the volatile byproducts, 136.5 C for TiCl 4 and 284 C for TiF 4 . 10 They also provide a better selectivity with SiO 2 than F-based plasmas.…”

Section: Introductionmentioning

confidence: 99%

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Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

Sang

Gour

Darnon

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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An inductively coupled plasma etch process for the fabrication of TiN nanostructures over nanotopography is presented. Using a Cl2/Ar/N2 plasma, a selectivity of 50 is achieved over SiO2. The effect of N2 flow rate on the etch rates and the nonvolatile residues on TiN sidewalls is investigated. As N2 flow rate is increased up to 50 sccm, a change in the deposition of the nonvolatile residues on TiN sidewalls is observed. The current density–voltage characterizations of TiN devices fabricated with TiN nanostructure sidewalls are presented. The measured current densities of two different samples etched with low and high N2 flow rate, respectively, demonstrated the presence after cleaning of an insulating layer deposited on the sidewalls for low N2 flow rate only.

show abstract

Section: B Effect Of N 2 Gas Flow On Etch Rates and Nonvolatile Resimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

Sang

Gour

Darnon

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl₂/Ar plasma

Zhang

Joo

et al. 2020

Mater. Res. Express

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We investigated the etching characteristics of aluminum-doped zinc oxide (AZO) thin films in an adaptively coupled plasma (ACP) system. The dry etching characteristics of AZO films were studied by changing the Cl2/Ar gas mixing ratio, RF power, DC bias voltage. We determined the following optimized process conditions: RF power of 500 W, DC bias voltage of −100 V, process pressure of 15 mTorr. In Cl2/Ar plasma (=50:50%), the maximum etching rate of AZO films is 70.45 nm min−1. The ion composition of Cl2/Ar plasma was determined by optical emission spectrometry (OES). The chemical reactions on the surface of AZO films were analyzed by x-ray photoelectron spectroscopy (XPS).

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The electron energy distribution in a low-pressure system combined inductive and capacitive discharge

Kim

Lee

et al. 2015

2015 IEEE International Conference on Plasma Sciences (ICOPS)

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Dry etching of TiN in N2/Cl2/Ar adaptively coupled plasma

Cited by 4 publications

References 28 publications

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl₂/Ar plasma

The electron energy distribution in a low-pressure system combined inductive and capacitive discharge

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Dry etching of TiN in N2/Cl2/Ar adaptively coupled plasma

Cited by 4 publications

References 28 publications

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma

The electron energy distribution in a low-pressure system combined inductive and capacitive discharge

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Product

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About

High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl₂/Ar plasma