2001
DOI: 10.1016/s0254-0584(00)00481-8
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Dry cleaning for metallic contaminants removal as the second cleaning process after the CMP process

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Cited by 8 publications
(1 citation statement)
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“…Some of the previous work concerned plasma removal of metal pollutants. The cleaning mechanism of hydrogen plasma on metal impurities, namely copper (Cu), iron (Fe) and potassium (K), on a Si substrate has been revealed [21]. Cu, K and Fe impurity atoms which coexist with the chemical and/or native oxides on the Si wafer surface are eliminated together when the oxides are removed by hydrogen plasma [22].…”
Section: Introductionmentioning
confidence: 99%
“…Some of the previous work concerned plasma removal of metal pollutants. The cleaning mechanism of hydrogen plasma on metal impurities, namely copper (Cu), iron (Fe) and potassium (K), on a Si substrate has been revealed [21]. Cu, K and Fe impurity atoms which coexist with the chemical and/or native oxides on the Si wafer surface are eliminated together when the oxides are removed by hydrogen plasma [22].…”
Section: Introductionmentioning
confidence: 99%