High Tc Superconductor Thin Films 1992
DOI: 10.1016/b978-0-444-89353-6.50044-0
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DROPLETS AND OUTGROWTHS ON HIGH-Tc LASER ABLATED THIN FILMS

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Cited by 5 publications
(5 citation statements)
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“…We have observed nearly equivalent results from all the targets we have tried, which is consistent with results reported in [3]. Some groups report that the target density or structure determines the occurrence of droplets, while other groups find no such dependence.…”
Section: Methodssupporting
confidence: 90%
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“…We have observed nearly equivalent results from all the targets we have tried, which is consistent with results reported in [3]. Some groups report that the target density or structure determines the occurrence of droplets, while other groups find no such dependence.…”
Section: Methodssupporting
confidence: 90%
“…Films with the best surface morphology appear to be possible only at a lower substrate temperature and over a much narrower range of temperatures than reported for direct deposition on substrates that do not require buffer layers [2,3,6]. Films with the best surface morphology appear to be possible only at a lower substrate temperature and over a much narrower range of temperatures than reported for direct deposition on substrates that do not require buffer layers [2,3,6].…”
Section: Introductionmentioning
confidence: 80%
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“…One of the mechanism of creation of the droplets (usually called outgrowth) can be explained by different growth rates ofYBaCuO in a-b plane and perpendicular to this plane [16]. The other theory suggests that the particles can arise during the expansion of plasma cloud in background gas [17].…”
Section: Droplets Problemmentioning
confidence: 99%
“…Standard deposition parameters were used. These parameters were optimised for the growth of epitaxial films with thicknesses between 60 and 200 nm, yielding reproducibly critical temperatures above 87 K [28 ]. After film deposition, silver contacts are evaporated and contact leads are defined by conventional photolithography and argon plasma etching, at a pressure of 4 Pa and a plasma bias voltage of 600 V. For these conditions, the etching rate of YBa2Cu307_6 is approximately 9 nm/min.…”
Section: Preparationmentioning
confidence: 99%