All-inorganic perovskites such as CsPbX 3 (X = Cl, Br, I) have recently emerged frequently in the field of optoelectronic devices, such as high-performance photodetectors (PDs), lasers, and flexible display devices, due to their excellent physical properties, especially their higher thermal stability. However, the practical application of solution-treated CsPbX 3 films is still hindered by the poor solubility of the precursors. To tackle this issue, vacuum deposition is employed to prepare highquality CsPbClBr 2 thin films, which could overcome the aforementioned predicament. In this work, CsPbClBr 2 thin films are prepared using single source thermal vacuum deposition with uniform and dense morphology. Moreover, the CsPbClBr 2 PD shows a high responsivity (R) of 28.93 mA/W and a fast response time of 270/310 ms. In particular, the performance of the unpackaged CsPbClBr 2 PDs still maintains 84% of their initial values after being irradiated continuously for 5 h with the 405 nm line laser with an optical power density of 0.15 mW/cm 2 . More importantly, even the unpackaged devices demonstrate more than 81% retention of their original R after being exposed to air (22 °C, 61% RH) for 28 days. All the above results exhibit outstanding maneuverability and storage stability of the unpackaged devices. Our work provides a promising way to fabricate high-coverage, dense, and uniform perovskite thin films for optoelectronic device applications.