Drift region engineering to reduce hot carrier effects on high voltage MOSFETs

Hao, Jiankui; Hahn, Daniel; Ghosh, Amartya; Rinehimer, M.; Yedinak, J.; McGowan, B. T.; Choi, Chul Jin; Kopley, T.E.

doi:10.1109/icsict.2018.8564932

Cited by 3 publications

(2 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The origin of the observed shift related to the presence of very high electric field which increase carrier injection into the grown silicon dioxide layer (SiO 2 ) and also into the interface state Si/SiO 2 [8,20]. The hot carrier degradation effect is closely related with current density and with the most number of free electrons in the silicon oxide region, which majority electrons are concentrated deeply inside the drift region [8,21].…”

Section: Results Analysis and Discussionmentioning

confidence: 99%

“…The current mechanism of degradation is composed of interface states produced by hot carriers (traps) and a some quantity of the hot electrons to be trapped in the later, than results in the accumulation of a negative charge at the Si-SiO 2 interface [20,23]. These negative charges attract load-depleting holes in the device drift region [21,23] and, therefore, increase the R DSON resistance and reduce the ability of Miller C RSS .…”

Section: Results Analysis and Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Temperature impact on reliability of power RF devices under S-band pulsed-RF test

Belaïd

Tlig

2020

SN Appl. Sci.

View full text Add to dashboard Cite

This paper presents an innovative reliability bench of aging life tests designed to high power RF applications for device lifetime under pulse conditions. The temperature effect on the parameters of power RF LDMOS (Radio Frequency Laterally Diffused-Metal-Oxide-Semiconductor) devices is highlighted. Indeed, the acceleration of the degradation mechanisms is related, directly or indirectly, to the temperature variation. The tests carried out on the power amplifier will be "Life-test RF" type (accelerated aging under constant constraints) over a period of 1500 h to quantify the drifts of the parameters measured (mainly P OUT and I DSS) under reliability bench life-test at different temperatures. The parameters of devices have been characterized i.e. static, dynamic and RF before and after testing. This allows us to quantify the degradation, of the shift, of a certain number of electrical quantities (V TH , G M , R DSON , C RSS , etc.). The analysis of the physical results has been presented (simulator 2D ATLAS-SILVACO) to explain and observe the physical review of temperature impacts on power RF LDMOS performance. Finally, initial impacts analysis have been discussed.

show abstract