Study of reliability degradation in power RF LDMOS under pulsed life test due to impact ionization

Belaïd, Mohamed Ali

doi:10.1109/ipfa49335.2020.9260827

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2020

DOI: 10.1109/ipfa49335.2020.9260827

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Study of reliability degradation in power RF LDMOS under pulsed life test due to impact ionization

Mohamed Ali Belaïd

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Study of reliability degradation in power RF LDMOS under pulsed life test due to impact ionization

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References 17 publications

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