Drift mobility measurements in a-SiNx:H

Güngör, Tayyar; Tolunay, Hüseyin

doi:10.1016/s0022-3093(01)00340-4

Cited by 6 publications

(4 citation statements)

References 11 publications

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“…This value of µ is almost two orders of magnitude lower than that for SiN x films measured by T. Güngör et al [24], which we attribute to a higher N content in the SiN x films by comparing the values of the optical band gap of SiN x films investigated in Ref. 24 with those of ours [14]. Besides, there are more dangling bonds in our SiN x films than those in Ref.…”

Section: Resultscontrasting

confidence: 51%

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Electrically tunable electroluminescence from SiNx-based light-emitting devices

Li¹,

Wang²,

Yang³

et al. 2012

Opt. Express

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Two obvious Gauss peaks are observed in SiN(x)-based light-emitting devices with silver nanoparticles deposited onto the luminous layer, both of which are blue shifted with the increase of injected current. The origin of these two peaks is discussed by means of the changes of their positions, relative intensities, and full width at half maximum. We attribute the blue-shift of both electroluminescence peaks to the improvement of carrier injection as carriers can be injected into higher energy levels along their corresponding band tails, which is also confirmed by the changes of the transport mechanism.

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Section: Resultscontrasting

confidence: 51%

“…Besides, there are more dangling bonds in our SiN x films than those in Ref. 24 due to the high temperature annealing as H will be released during this process. More interfacial states produced by these dangling bonds will lower the carrier drift mobility further as carriers will be trapped or scattered [25].…”

Section: Resultsmentioning

confidence: 82%

Electrically tunable electroluminescence from SiNx-based light-emitting devices

Li¹,

Wang²,

Yang³

et al. 2012

Opt. Express

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“…Sample C has the highest resistivity and does not undergo any galvanic attack. The resistivity and the protection afforded by the coating E are intermediate between samples A and C. These results might be explained considering a semi‐conductive behavior of the different thin films 32–34. Actually, in this case, electrochemical reactions at a semiconductor/electrolyte interface proceed by a transfer of charge carriers.…”

Section: Resultsmentioning

confidence: 99%

Study of the Si Chemical Bonding and the Semiconductive Behavior of SiCN Coatings and their Correlation with Anti‐Corrosion Properties

Loir

Pech

Steyer

et al. 2007

Plasma Processes & Polymers

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Amorphous hydrogenated SiCN coatings have been deposited by a PACVD process on M2 steel and silicon substrates. The nitrogen content within the coatings was varied by changing the synthesis conditions. The chemical composition and nature of bonding have been studied by XPS and by X‐ray‐induced AES. The electrochemical and the semi‐conductive properties were evaluated by polarization curves and by using the Mott‐Schottky experiments, respectively. When increasing the N/Si ratio, we observed an increase of Si atoms inside the film structure, which were directly bonded to nitrogen. This gradual incorporation of N modified the electrochemical behavior of the films displaying a variation of the density of charge carriers and the semiconductive behavior (p‐ to n‐type). The modified Auger parameter of silicon was used to determine the nature of the silicon chemical bonding inside the [SiCN]‐based coatings and to predict their corrosion behavior.

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“…Thus, applying these variables in modeling may be well suited for commonly used and reported materials, though it is not appropriate to apply them in the new material development stage. In this model, the charge trap efficiency of the dielectric layer was expressed using the mobility-lifetime (μτ) product, a parameter that can be measured quantitatively, [16][17][18][19][20][21][22][23] as an electrical conduction variable in the charge trap layer. In addition, this model shows the movement of charges injected into the trap layer intuitively and is easy to understand using the average trap distance, drift velocity, and carrier lifetime.…”

Section: Introductionmentioning

confidence: 99%

Charge trap modeling based on mobility–lifetime (μτ) product for NAND flash program operation

Kim¹,

Baik²

2021

Jpn. J. Appl. Phys.

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High-density development of 3D NAND flash is based on increasing the height of memory cell stacking, which continuously increases fabrication difficulty. It is thus necessary to develop a unit cell scaling technology to reduce the fabrication difficulty. The future direction of unit cell scaling should be based on the development of material with high dielectric constants. In developing new materials, predictable simulation models are required to facilitate practical device development. In this study, we present a model to simulate programming characteristics, where the mobilitycarrier-lifetime (μτ) product represents the charge-trapping efficiency of charge trap dielectric films. The average distance from the tunneling layer of trapped charges is assumed to be proportional to the electric field in the trap layer, which is a consequence of the μτ parameterization. The simulated trapped charge distribution indicates that the average trap distance moves closer to the tunnel layer as the program time elapses. Additionally, the program window increases as the average trap distance decreases. A new trap layer material that would replace conventional Si 3 N 4 needs to have a μτ lower than 5 × 10 −15 cm 2 V −1 .

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Drift mobility measurements in a-SiNx:H

Cited by 6 publications

References 11 publications

Electrically tunable electroluminescence from SiNx-based light-emitting devices

Electrically tunable electroluminescence from SiNx-based light-emitting devices

Study of the Si Chemical Bonding and the Semiconductive Behavior of SiCN Coatings and their Correlation with Anti‐Corrosion Properties

Charge trap modeling based on mobility–lifetime (μτ) product for NAND flash program operation

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