Electrically tunable electroluminescence from SiNx-based light-emitting devices

Abstract

Two obvious Gauss peaks are observed in SiN(x)-based light-emitting devices with silver nanoparticles deposited onto the luminous layer, both of which are blue shifted with the increase of injected current. The origin of these two peaks is discussed by means of the changes of their positions, relative intensities, and full width at half maximum. We attribute the blue-shift of both electroluminescence peaks to the improvement of carrier injection as carriers can be injected into higher energy levels along their corresponding band tails, which is also confirmed by the changes of the transport mechanism.

Analysis of the luminescent centers in silicon rich silicon nitride light-emitting capacitors

“…These results proved the feasibility of obtaining a Si-based light source, which is highly desirable for silicon based photonics technology. In recent years, most of the effort in this field has been directed towards Si-rich silicon nitride (SRN) due to its luminescence properties, as well as the better control of carrier injection for Si-based light emitting devices (LEDs) [3]. Silicon nitride-based structures offer, over oxidebased active materials, a considerable reduction in the electron/hole injection barriers at the Si/silicon nitride interfaces, resulting in the fabrication of low-voltage electroluminescent devices with improved electrical stability [4,5].…”

Localized surface plasmon resonance enhanced photoluminescence from SiNx with different N/Si ratios

“…All these PL peaks are originated from the radiative recombination between the band tails in SiN x films [2]. The difference between the central peaks of PL may result from the different state densities of band tails for different N/Si ratios [2,3,38]. Deeper band tail, mainly the N dangling bands ( = N -), contributes to the larger value of E opt as well as the shorter PL wavelength of SiN x matrixes.…”

Silicon-based optoelectronic luminescent materials and devices

“…同时, 氮化硅的禁带宽度比氧化硅更小, 更加有利 于载流子在基质中的传输. 2011年, Monroy等人 [57] 图 9 Nano-Si MQW器件的I-V曲线及F-N公式拟合结果 [55] http://engine.scichina.com/doi/10.1360/N092017-00005 图 10 (网络版彩图)正向偏置条件下硅基氮化硅电致发光 器件的能带结构示意图 [61] 硅基氮氧化物薄膜发光机制的研究和器件光增 益的实现为其在硅基光电子应用提供了可能, 但目前 器件电致发光的外量子效率还有待进一步提升. 在未 来的研究中, 关于介质层和电极材料的选择、局域表 面等离子的影响机制、器件结构的设计和优化仍需 加深理解.…”