Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys

Design and optimization of a buried channel PMOS integrable in a Si1−xGex BiCMOS process

“…These enhancement values are very close to those obtained by Manku et al [27]. Thus, it has been assumed that the above model remains valid up to x = 0.3 also.…”

Characterization of SiGe quantum-well p-channel MOSFETs

“…With this improved mobility of 70% the drain current in the saturation regime was increased to about 20% at room temperature. The still high doping concentrations in the channel region explain the comparatively low absolute mobilities in all devices, compared to possible bulk hole mobilities of about 400 cm2/Vs with 20% Ge [1]. Thus for higher SiGe contents of 30% and lower doping concentrations in the SiGe quantum well using a gate oxide grown at 700 °C further improvements can be expected.…”

“…The reason is impurity scattering due to high doping concentrations in the channel region, surface scattering at the SiOz interface and the presence of high electric fields in transistor operation. Using a GexSi~_x quantum well for the hole channel, mobility in the strained SiGe layer is higher due to the lower effective mass in the channel [1] and surface scattering is eliminated by the hole confinement in the buried SiGe channel [2][3][4][5][6].…”

Effect of Mobile Space Charge in Si/Si0.9Ge0.1 Heterojunction Double Drift Impart Oscillator at W-Band Window Frequency

“…al. [15], carrier saturation drift velocities are evaluated by the full-band model in the undoped Si 1-x Ge x as a function of Ge content from Thomber [19] and the other material parameters for Si 1-x Ge x are taken from data reported elsewhere [20][21][22]. The parameters for Si are taken from data reported elsewhere [22][23][24].…”