Drawing graphene nanoribbons on SiC by ion implantation

Tongay, Sefaattin; Lemaitre, Maxime G.; Fridmann, Joel; Hebard, A. F.; Gila, B. P.; Appleton, B. R.

doi:10.1063/1.3682479

Cited by 38 publications

(22 citation statements)

References 12 publications

(5 reference statements)

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“…Other methods have been suggested, e.g., in [169]. The authors describe a technique for selective graphene growth and nanoribbon production onto 4H-and 6H-SiC.…”

Section: Graphene Nanoribbons (Gnrs) On Sicmentioning

confidence: 99%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

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“…Other methods have been suggested, e.g., in [169]. The authors describe a technique for selective graphene growth and nanoribbon production onto 4H-and 6H-SiC.…”

Section: Graphene Nanoribbons (Gnrs) On Sicmentioning

confidence: 99%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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“…Silicon sublimation from the surface of SiC implanted with Au and Si ions takes place at lower temperature; thus, in these regions the graphitization temperature is reduced from 1300°C to 1200°C [100].…”

Section: Masking Via Ion Implantationmentioning

confidence: 99%

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

et al. 2017

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The evolution of optical microscopy from an imaging technique into a tool for materials modification and fabrication is now being repeated with other characterization techniques, including scanning electron microscopy (SEM), focused ion beam (FIB) milling/imaging, and atomic force microscopy (AFM). Fabrication and in situ imaging of materials undergoing a three-dimensional (3D) nano-structuring within a 1−100 nm resolution window is required for future manufacturing of devices. This level of precision is critically in enabling the cross-over between different device platforms (e.g. from electronics to micro-/ nano-fluidics and/or photonics) within future devices that will be interfacing with biological and molecular systems in a 3D fashion. Prospective trends in electron, ion, and nano-tip based fabrication techniques are presented.

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“…However, SiC may be an attractive option to explore ion beam carbon deposition plus thermal annealing (for instance, for CNT growth due to material compatibility and combinability). What is more, some literature indicates that FIBID-C could be a powerful approach for selective graphene formation in SiC, as reported in [ 73 ] done by ion irradiation.…”

Section: Processing Capability Of Fibid-c: Support Materials and Chemmentioning

confidence: 91%

Metal-Induced Crystallization of Focused Ion Beam-Induced Deposition for Functional Patterned Ultrathin Nanocarbon

Rius

Borrisé

Mestres

2013

Lecture Notes in Nanoscale Science and Technology

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This chapter recapitulates our work based on focused ion beam-induced deposition of ultrathin amorphous carbon (FIBID-C) patterns as a route towards the easy integration of carbon nanomaterials. The use of postdeposition thermal processing causes structural changes, chemical modifi cation, and tuning of functional properties of the as-deposited FIBID-C. Particularly, in combination with metals our approach allows obtaining site-specifi c graphene-like features on insulators. We explore how to convert FIBID-C into functional materials, namely, graphene-like layers or diamond-like coatings, or combination with various metals.First, we provide a general description of FIBID technique to frame the profuse detailed case of carbon deposition of ultrathin carbon micropatterns. Then, the study of the transformation of FIBID-C by thermal processing reveals the unique characteristics of the as-deposited materials and particularities of the metal-induced crystallization. A detailed section on Raman spectroscopy is included as it represents a powerful tool to identify any carbon form, from amorphous to perfectly crystalline,

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Drawing graphene nanoribbons on SiC by ion implantation

Cited by 38 publications

References 12 publications

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

Metal-Induced Crystallization of Focused Ion Beam-Induced Deposition for Functional Patterned Ultrathin Nanocarbon

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