DRAM failure cases under hot-carrier injection

Baeg, Sanghyeon; Chia, Pierre; Wen, Shi-Jie; Wong, Richard

doi:10.1109/ipfa.2011.5992747

Cited by 10 publications

(8 citation statements)

References 4 publications

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“…The row hammer effect is an unintended side effect that occurs when a memory row, referred to as the hammer row, is rapidly and repeatedly accessed, causing cells in nearby rows, called victim rows, to leak charge more quickly [2,22,[24][25][26]. This charge leakage can cause the cell's logical value to change, causing what is known as a bit flip.…”

Section: The Row Hammer Effect In Drammentioning

confidence: 99%

Intrinsic Run-time Row Hammer PUFs: Leveraging the Row Hammer Effect for Run-Time Cryptography and Improved Security

Anagnostopoulos¹,

Arul²,

Fan³

et al. 2018

Preprint

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Physical Unclonable Functions (PUFs) based on the retention times of the cells of a Dynamic Random Access Memory (DRAM) can be utilised for the implementation of cost-efficient and lightweight cryptographic protocols. However, as recent work has demonstrated, the times needed in order to generate their responses may prohibit their widespread usage. In order to address this issue, the Row Hammer PUF has been proposed by Schaller et al. [1], which leverages the row hammer effect in DRAM modules to reduce the retention times of their cells and, therefore, significantly speed up the generation times for the responses of PUFs based on these retention times. In this work, we extend the work of Schaller et al. by presenting a run-time accessible implementation of this PUF and further reducing the time required for the generation of its responses. Additionally, we also provide a more thorough investigation of the effects of temperature variations on the the Row Hammer PUF and briefly discuss potential statistical relationships between the cells used to implement it. As our results prove, the Row Hammer PUF could potentially provide an adequate level of security for Commercial Off-The-Shelf (COTS) devices, if its dependency on temperature is mitigated, and, may therefore, be commercially adopted in the near future.

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Section: The Row Hammer Effect In Drammentioning

confidence: 99%

Intrinsic Run-time Row Hammer PUFs: Leveraging the Row Hammer Effect for Run-Time Cryptography and Improved Security

Anagnostopoulos¹,

Arul²,

Fan³

et al. 2018

Preprint

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show abstract

“…There were five failures classified by Cisco Systems in their DRAM analyses of HCI [7]. The first type of failure occurred at the global word-line circuit, which was degraded due to a pumped voltage (Vccp).…”

Section: Hot Carrier Injectionmentioning

confidence: 99%

“…The first type of failure occurred at the global word-line circuit, which was degraded due to a pumped voltage (Vccp). This resulted in slower high transition of the word-line signal [7]. The second type of failure occurred mainly due to slower low transition of the word-line signal, which then affected the remainder of the operations.…”

Section: Hot Carrier Injectionmentioning

confidence: 99%

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Reliability considerations of ULP scaled CMOS in spacecraft systems

White

MacNeal

Cooper

2013

2013 Proceedings Annual Reliability and Maintainability Symposium (RAMS)

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“…Industrials seldom communicate on their difficulties or on the failure cases they experienced (see for instance [1,2] for rare examples of the description of field return cases due to premature wearout of a silicon device). However, the products lifetime expectation from our customers and the life expectancy of the microelectronic components embedded in these products are now so divergent that we think time has come to sound the alarm and share our concerns.…”

Section: Introductionmentioning

confidence: 99%