Drain Current Model of a Four-Gate Dielectric Modulated MOSFET for Application as a Biosensor

Ajay, Ajay; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

doi:10.1109/ted.2015.2441753

Cited by 30 publications

(11 citation statements)

References 31 publications

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“…C DL accounts for the electrical double layer that appears at the electrolyte/ graphene interface [49] and ranges from a few µF/cm 2 to a few hundred of µF/cm 2 depending on the metal electrodes or the ionic concentration of the electrolyte. [49,50] C Stern models the region depleted of ionic charges close to the surface [51][52][53] , with values also varying among tens of µF/cm 2 . [54] Finally, C gap considers the hydrophobic nature of the graphene surface and the consequent changes in the electrolyte close to it: [55] as demonstrated by molecular dynamics simulations, [53] the density of water decreases strongly at the surface resulting in a so-called hydrophobic gap between the solid and the electrolyte.…”

Section: Electrostatics Of Liquid-gated Gosfetsmentioning

confidence: 99%

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Fomin

Marín

Pasadas

et al. 2023

Adv Elect Materials

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This continuous downsizing has brought numerous advantages but also relevant challenges, coming hand-in-hand with the conception of novel and varied applications. [3][4][5][6] Among them, biosensing and bioelectronic applications have been successfully explored [7,8] , e.g., employing functionalized specific biomarkers on SiFETs surface, enabling selective label-free detection. [9,10] Silicon has also been utilized for numerous in vitro recordings of electrogenic cells (cardiac or neural) or even in vivo mapping of the whole brain. [11,12] However, it is known to be a bioresorbable material that degrades over time once immersed in saline, thus, suffering from a limited operation time for in vivo applications. [13,14] While silicon still dominates the industrial semiconductor scene, a new material has emerged rather recently, transforming materials science: graphene. Accompanied by other two-dimensional (2D) materials, graphene has already opened new prospects in modern nanoelectronic applications [15][16][17][18] and also holds a great promise for bio-and neuroapplications due to its extraordinary conductivity and good biocompatibility. [19][20][21] In particular, graphene-based FETs (GFETs) and microelectrode arrays (MEAs), both rigid and flexible, have been reported to successfully interface with electrogenic cellsThe combination of graphene and silicon in hybrid electronic devices has attracted increasing attention over the last decade. Here, a unique technology of graphene-on-silicon heterostructures as solution-gated transistors for bioelectronics applications is presented. The proposed graphene-onsilicon field-effect transistors (GoSFETs) are fabricated by exploiting various conformations of channel doping and dimensions. The fabricated devices demonstrate hybrid behavior with features specific to both graphene and silicon, which are rationalized via a comprehensive physics-based compact model which is purposely implemented and validated against measured data. The developed theory corroborates that the device hybrid behavior can be explained in terms of two independent silicon and graphene carrier transport channels, which are, however, strongly electrostatically coupled. Although GoSFET transconductance and carrier mobility are found to be lower than in conventional silicon or graphene field-effect transistors, it is observed that the combination of both materials within the hybrid channel contributes uniquely to the electrical response. Specifically, it is found that the graphene sheet acts as a shield for the silicon channel, giving rise to a nonuniform potential distribution along it, which impacts the transport, especially at the subthreshold region, due to non-negligible diffusion current.

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Section: Electrostatics Of Liquid-gated Gosfetsmentioning

confidence: 99%

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Fomin

Marín

Pasadas

et al. 2023

Adv Elect Materials

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“…Для підвищення чутливості конструкція може мати дві чутливі поверхні на протилежних від p-Si каналу транзистора сторонах та чотири затвори [4]. При цьому довжина каналу біосенсора складає 800 нм.…”

Section: підходи щодо реалізації сенсорних структурunclassified

Modeling field structures for biosensor with systems of quantum dots

Kutova¹,

Shuliak²,

Tymofeev³

2016

Electronics and Communications

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“…In recent years, the research community has exhibited a rising interest in field-effect transistors (FET)-based biosensors. FET biosensors are known for their high sensitivity, responsivity, scalability, and portability along with reduced costs and power consumption [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Ion-sensitive FET (ISFET) is a specialized FET sensor that accounts for a change in surface potential in the presence of a sensing insulating layer.…”

Section: Introductionmentioning

confidence: 99%

Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor

De¹,

Kanrar²,

Sarkar³

2022

Semicond. Sci. Technol.

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Field Effect Transistor (FET) pH sensors are being studied for a long time due to their low cost, sound sensitivity, and high operational speed. In recent times, Transition Metal Dichalcogenides (TMD) materials like MoTe2, MoS2, etc., have emerged as promising channel materials for energy-efficient electronic devices. TMD-based sensors show excellent results due to the high surface area-volume ratio and better bio-specific interaction. This paper proposes and analyses a MoTe2 channel-based dual-cavity accumulation MOSFET as a pH sensor. For a comprehensive study, a pH-FET noise model has been considered to investigate the amount of noise associated with the proposed FET under various ionic concentrations and device dimensions. The electrolytic semiconductor has been modeled based on ion dynamics for the simulation study. Site-Binding Model has been incorporated to capture the surface charge density fluctuation at the interface of electrolyte and gate-oxide for different pH values. The effect of gate length scaling on the device performance is studied to comprehend its scalability. With this MoTe2-based dual-cavity accumulation MOSFET sensor, a peak threshold sensitivity of 77 mV/pH has been obtained. To provide a comparative performance analysis of the proposed work, a benchmarking figure is included in the manuscript and a detailed fabrication methodology has also been presented. All simulations are done with an experimentally calibrated setup in SILVACO TCAD.

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Drain Current Model of a Four-Gate Dielectric Modulated MOSFET for Application as a Biosensor

Cited by 30 publications

References 31 publications

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Modeling field structures for biosensor with systems of quantum dots

Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor

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Drain Current Model of a Four-Gate Dielectric Modulated MOSFET for Application as a Biosensor

Cited by 30 publications

References 31 publications

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Modeling field structures for biosensor with systems of quantum dots

Noise analysis of MoTe2-based dual-cavity MOSFET as a pH sensor

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Product

Resources

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Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor