Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts

Imanishi, Shoichiro; Kudara, Ken; Ishiwata, Hitoshi; Horikawa, Kiyotaka; Amano, Shotaro; Iwataki, Masayuki; Morishita, Aoi; Hiraiwa, Atsushi; Kawarada, Hiroshi

doi:10.1109/led.2020.3047522

Cited by 28 publications

(12 citation statements)

References 22 publications

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“…The maximum drain current (I Dmax ) is −21.9 mA/mm at V GS = −5 V and V DS = −10 V. Compared with the reported device in Table 1 , this work has a relatively high current density and mobility. However, the current density is small, especially compared with a normally-on device (1.1 A/mm [ 29 ]). This is because, in normally-off devices, the current density is lower because the carriers in the channel are depleted by insulators or metal.…”

Section: Resultsmentioning

confidence: 99%

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn

Wang

Chen

et al. 2022

Materials

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SnOx films were deposited on a hydrogen-terminated diamond by thermal oxidation of Sn. The X-ray photoelectron spectroscopy result implies partial oxidation of Sn film on the diamond surface. The leakage current and capacitance–voltage properties of Al/SnOx/H-diamond metal-oxide-semiconductor diodes were investigated. The maximum leakage current density value at −8.0 V is 1.6 × 10−4 A/cm2, and the maximum capacitance value is measured to be 0.207 μF/cm2. According to the C–V results, trapped charge density and fixed charge density are determined to be 2.39 × 1012 and 4.5 × 1011 cm−2, respectively. Finally, an enhancement-mode H-diamond field effect transistor was obtained with a VTH of −0.5 V. Its IDMAX is −21.9 mA/mm when VGS is −5, VDS is −10 V. The effective mobility and transconductance are 92.5 cm2V−1 s−1 and 5.6 mS/mm, respectively. We suspect that the normally-off characteristic is caused by unoxidized Sn, whose outermost electron could deplete the hole in the channel.

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Section: Resultsmentioning

confidence: 99%

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn

Wang

Chen

et al. 2022

Materials

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“…The systematic interface dependence at the Al 2 O 3 /C-H diamond interface has not been discussed to date. However, MOSFETs on (111) and (110) substrates present higher drain current densities [21,81] than those on (001) substrates, showing similar trends to the effects of adsorbates or electrolyte solutions [75]. The formation of the negatively charged sites in the insulator can be influenced by the C-H surface dipoles, where the surface side is partially positively charged by the H atoms.…”

Section: Dhg On C-h Diamondmentioning

confidence: 88%

Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits

Kawarada¹

2022

J. Phys. D: Appl. Phys.

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Diamond is a wide bandgap semiconductor (bandgap 5.5 eV). However, due to impurity doping, it becomes a p-type or n-type semiconductor. The minimum resistivity of the p-type semiconductor is less than 10-3 Ωcm, which is equivalent to that of silicon (Si). When the diamond surface is terminated with hydrogen (H) or Si atoms, the subsurface becomes a p-type accumulation layer or inversion layer, forming a two-dimensional Hall gas (2DHG) that can be used as a channel for field effect transistors (FETs). As a p-channel FET (p-FET), its performance is now approaching that of other wide bandgap semiconductor n-channel FETs. This review describes the metal contact and 2DHG formation on the H-terminated diamond surface from a surface dipole perspective. Recent advances in 2DHG FETs have been discussed, especially in current densities of > 1A / mm and high frequency performance. Finally, we propose two types of complementary high-voltage circuits that combine diamond p-FETs and other wide bandgap semiconductor n-FETs.

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“…During the past 30 years, the growth of diamond has gained a steady development due to the great advances in the chemical vapor deposition (CVD) methodology and the expanding application requirements in electronics, [ 30 ] photonics, [ 31 ] communications, [ 32 ] sensors, [ 33 ] and thermal management. [ 34 ] In viewing of the progress of diamond growth and micromachining technologies, different diamond forms such asMCD, NCD, UNCD, and SCD were developed to fabricate diamond MEMS devices.…”

Section: Microfabrication Of Diamond Memsmentioning

confidence: 99%

Diamond MEMS: From Classical to Quantum

Sun,

Zhang,

Liu

et al. 2023

Adv Quantum Tech

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Diamond has numerous outstanding properties in mechanics, physics, chemistry, electronics, thermodynamics, and spintronics for either classic micro/nanoelectromechanical systems (MEMS/NEMS) devices or hybrid quantum MEMS/NEMS systems. The extremely high mechanical strength and the ultra‐wide bandgap energy enable the development of mechanically and thermally robust MEMS/NEMS sensors and switches, while the long coherence time of spin defects center enables the reading out through optical methods, precise quantum sensing, and quantum information processing. In this paper, the development of diamond‐based MEMS/NEMS from the viewpoints of classic devices to quantum systems are reviewed. The fabrication process and the classic applications of diamond MEMS/NEMS devices are first described, including those from micro‐crystalline, nano‐crystalline/ultranano‐crystalline, and single‐crystalline diamonds. Then, the physical properties of nitrogen‐vacancy defect center, as well as the application referred to the hybrid system composed of MEMS structures and nitrogen‐vacancy centers embedded, strain–spin interaction, and diamond‐based optomechanics are introduced. Finally, a conclusion and outlook are presented. It is expected that diamond MEMS/NEMS is not only an ideal platform for high‐performance and high‐reliability advanced classic MEMS devices but also for quantum sensing, information, and exploring the fundamentals of quantum mechanics.

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Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts

Cited by 28 publications

References 22 publications

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn

Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits

Diamond MEMS: From Classical to Quantum

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