Drain breakdown in submicron MOSFETs: a review

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

“…We infer that the MOSFETs operating in the breakdown region may bring a reliability issue due to high electric field Refs. [9,19] when compared with the normal operation. IMD is an important characteristic for device analysis and circuit design [1][2][3].…”

“…The MOSFETs with shorter gate length can lead to impact-ionization induced avalanche breakdown [8,9] due to the high lateral electric field at the drain end of the channel. This high field effect is important for reliability issues [8,10] because the influence of MOSFET degradation on CMOS circuits due to an impact ionization effect can be a concern.…”

Challenges for Future Semiconductor Manufacturing

“…Power and performance of a chip can be traded off. For the low standby-power device such as cellular phones, subthreshold leakage current between source and drain [104], and gate dielectric leakage current significantly reduce the battery operation duration. The gate leakage current can be solved by using a physically thicker high-k gate dielectrics and the subthreshold leakage current can be suppressed by using a three-dimensional (3D) structure, such as fin-FET [19] (see Fig.…”

Future of Nano-CMOS Technology and Its Production

“…W~For the low standby-power device such as cellular phones, currernt;1 subthreshold leakage current between source and drain [104], and Impuritty nlon-unliformity gate dielectric leakage current significantly reduce the battery operation duration. The gate leakage current can be solved by using a physically thicker high-k gate dielectrics and the subthreshold Fig.…”