2016
DOI: 10.1002/adma.201506213
|View full text |Cite
|
Sign up to set email alerts
|

Double‐Sided Junctions Enable High‐Performance Colloidal‐Quantum‐Dot Photovoltaics

Abstract: The latest advances in colloidal-quantum-dot material processing are combined with a double-sided junction architecture, which is done by efficiently incorporating indium ions in the ZnO eletrode. This platform allows the collection of all photogenerated carriers even at the maximum power point. The increased depletion width in the device facilitates full carrier collection, leading to a record 10.8% power conversion efficiency.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

2
97
0

Year Published

2017
2017
2019
2019

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 126 publications
(100 citation statements)
references
References 30 publications
2
97
0
Order By: Relevance
“…In the cathode side, the component and morphology of the ZnO film, the interface between the ZnO film and the PbS QDs film are all important factors. For instance, boron, nitrogen, indium, and magnesium were incorporated into the ZnO film to adjust its band gap structure and strengthen the depletion region at the ZnO/PbS interface. Nanowire array ZnO was adopted to shorten the transfer path and speed up photoelectron extraction; Modifications of the ZnO film surface using chalcogenides, conjugated polyelectrolyte, thin oxide, and CdSe quantum dot were implemented to facilitate carrier transfer from the PbS QDs to the ZnO film.…”
Section: Average Values and Standard Deviations From The 20 Devices Fmentioning
confidence: 99%
“…In the cathode side, the component and morphology of the ZnO film, the interface between the ZnO film and the PbS QDs film are all important factors. For instance, boron, nitrogen, indium, and magnesium were incorporated into the ZnO film to adjust its band gap structure and strengthen the depletion region at the ZnO/PbS interface. Nanowire array ZnO was adopted to shorten the transfer path and speed up photoelectron extraction; Modifications of the ZnO film surface using chalcogenides, conjugated polyelectrolyte, thin oxide, and CdSe quantum dot were implemented to facilitate carrier transfer from the PbS QDs to the ZnO film.…”
Section: Average Values and Standard Deviations From The 20 Devices Fmentioning
confidence: 99%
“…Sol–gel‐derived ZnO films are often employed and can feature different nanostructures, interface engineering strategies, and dopants . Recent certified record PCEs have been achieved using spin‐coated ZnO nanoparticles that exhibited several advantages over sol–gel‐derived ZnO films, such as improved conductivity due to larger grain size, improved thickness control, and film formation without additional heat treatment (sol–gel‐derived ZnO requires 200 °C annealing), and suitability for mass‐production and printable devices. Recently, Jang and co‐workers explicitly compared the device performance of CQD PV devices employing ZnO nanoparticles and sol–gel‐derived ZnO films, while using the same device configuration, and demonstrated the superiority of ZnO nanoparticles …”
mentioning
confidence: 99%
“…Several approaches have been developed to reduce the surface defect density in ZnO, such as using interlayers, and organic and inorganic passivating agents . The interlayer strategies, including self‐assembled monolayers and conjugated polymers introduced on top of ZnO films, prevent the direct contact between the electron transport layers and the CQD layer and form an interfacial dipole that favors electron extraction .…”
mentioning
confidence: 99%
“…[3][4][5][6][7][8][9][10][11][12] In the research on CQD surface engineering, effective halide-passivation successfully reduced the trap state density of CQDs, achieving increased charge drift and charge diffusion. [3][4][5][6][7][8][9][10][11][12] In the research on CQD surface engineering, effective halide-passivation successfully reduced the trap state density of CQDs, achieving increased charge drift and charge diffusion.…”
mentioning
confidence: 99%