2022
DOI: 10.1016/j.cej.2022.134760
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Double-Side healing at CsPbI2Br/ZnO interface by bipyrimidine hydroiodide enables inverted solar cells with enhanced efficiency and stability

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Cited by 20 publications
(11 citation statements)
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“…The long-term device stability was attributed to that BP-HI increased the hydrophobicity film surface, released tensile strain of CsPbI 2 Br films and inhibited I − ion migration along the perovskite grain boundaries from interacting with the Ag electrode. 28…”
Section: Strategies For Boosting the Performance And Stability Of Csp...mentioning
confidence: 99%
See 1 more Smart Citation
“…The long-term device stability was attributed to that BP-HI increased the hydrophobicity film surface, released tensile strain of CsPbI 2 Br films and inhibited I − ion migration along the perovskite grain boundaries from interacting with the Ag electrode. 28…”
Section: Strategies For Boosting the Performance And Stability Of Csp...mentioning
confidence: 99%
“…TiO 2 , SnO 2 , or NiO x with a TE : 0.1 B2 Â 10 À5 K À1 ) or a large temperature gradient from perovskite formation temperature (i.e., 4160 1C for CsPbI 2 Br) to RT inducing tensile strain at the perovskite/CTL interface, which leads to severe nonradiative charge recombination and V OC reduction. [24][25][26][27][28][29] In addition, the crystallization kinetics of the CsPbI 2 Br perovskite film is poor at low temperatures. 30 The CsPbI 2 Br film requires a high sintering temperature of 4250 1C to maintain the black cubic a-phase with excellent film morphology, 31 which is energy consuming and not suitable for flexible-based device application.…”
Section: Critical Challenges Of Cspbi 2 Br Pscsmentioning
confidence: 99%
“…Yuan et al demonstrated a dual-sided healing strategy by introducing bipyrimidine hydroiodide (BP-HI) at the CsPbI 2 Br/ZnO interface, which achieved the simultaneous improvement of perovskite and ETL performance. [154] Nevertheless, the improvement of V OC and PCE of PSCs has always faced a significant challenge due to the limitation of thermodynamics. [155] On this ground, Wang and coworkers replaced the ETL with SnO 2 , which has high electron mobility (240 cm 2 v −1 s −1 ) and high stability.…”
Section: Passivation Of the Perovskite/etl Interfacementioning
confidence: 99%
“…Yuan et al introduced trace hydrophobic S8 into the C S PbI 2 Br precursor, which not only delayed the crystallization of α-CsPbI 2 Br perovskite but also passivated the grain boundary effectively and improved the photoelectric conversion efficiency . In addition, they creatively introduced bipyrimidine hydroiodide (BP-HI) at the CsPbI 2 Br/ZnO interface, which simultaneously improved the performance of perovskite and electron transport layer (ETL) through a double-side healing strategy …”
Section: Introductionmentioning
confidence: 99%
“…40 In addition, they creatively introduced bipyrimidine hydroiodide (BP-HI) at the CsPbI 2 Br/ZnO interface, which simultaneously improved the performance of perovskite and electron transport layer (ETL) through a double-side healing strategy. 41 Herein, propylamine hydrobromide (PABr) and its derivative 3-bromopropylamine hydrobromide (3Br-PABr) were used to passivate the surface defects of carbon-based CsPbI 2 Br perovskite films for the first time. The amino group in PABr reduced the defect state density of perovskite by combining with uncoordinated Pb 2+ ions.…”
Section: Introductionmentioning
confidence: 99%