Chemically prepared colloidal semiconductor quantum dots have long been proposed as scalable and color-tunable single emitters in quantum optics, but they have typically suffered from prohibitively incoherent emission. We now demonstrate that individual colloidal lead halide perovskite quantum dots (PQDs) display highly efficient single photon emission with optical coherence times as long as 80 ps, an appreciable fraction of their 210 ps radiative lifetimes. These measurements suggest that PQDs should be explored as building blocks in sources of indistinguishable single photons and entangled photon pairs.Our results present a starting point for the rational design of lead halide perovskite-based quantum emitters with fast emission, wide spectral-tunability, scalable production, and which benefit from the hybrid-integration with nano-photonic components that has been demonstrated for colloidal materials. Tisdale.
Solution processable flexible transparent electrodes (FTEs) are urgently needed to boost the efficiency and mechanical stability of flexible organic solar cells (OSCs) on a large scale. However, how to balance the optoelectronic properties and meanwhile achieve robust mechanical behavior of FTEs is still a huge challenge. Silver nanowire (AgNW) electrodes, exhibiting easily tuned optoelectronic/mechanical properties, are attracting considerable attention, but their poor contacts at the junction site of the AgNWs increase the sheet resistance and reduce mechanical stability. In this study, an ionic liquid (IL)-type reducing agent containing Cl − and a dihydroxyl group was employed to control the reduction process of silver (Ag) in AgNW-based FTEs precisely. The Cl − in the IL regulates the Ag + concentration through the formation and dissolution of AgCl, whereas the dihydroxyl group slowly reduces the released Ag + to form metal Ag. The reduced Ag grew in situ at the junction site of the AgNWs in a twin-crystal growth mode, facilitating an atomic-level contact between the AgNWs and the reduced Ag. This enforced atomic-level contact decreased the sheet resistance, and enhanced the mechanical stability of the FTEs. As a result, the single-junction flexible OSCs based on this chemically welded FTE achieved record power conversion efficiencies of 17.52% (active area: 0.062 cm 2 ) and 15.82% (active area: 1.0 cm 2 ). These flexible devices also displayed robust bending and peeling durability even under extreme test conditions.
Theoretical analysis shows that, to improve the resolution and the range of the field of view of the reconstructed image in digital lensless Fourier transform holography, an effective solution is to increase the area and the pixel number of the recorded digital hologram. A new approach based on the synthetic aperture technique and use of linear CCD scanning is presented to obtain digital holographic images with high resolution and a wide field of view. By using a synthetic aperture technique and linear CCD scanning, we obtained digital lensless Fourier transform holograms with a large area of 3.5 cm x 3.5 cm (5000 x 5000 pixels). The numerical reconstruction of a 4 mm object at a distance of 14 cm by use of a Rayleigh-Sommerfeld integral shows that a theoretically minimum resolvable distance of 2.57 microm can be achieved at a wavelength of 632.8 nm. The experimental results are consistent with the theoretical analysis.
InP
quantum dots (QDs) are the material of choice for
QD display
applications and have been used as active layers in QD light-emitting
diodes (QDLEDs) with high efficiency and color purity. Optimizing
the color purity of QDs requires understanding mechanisms of spectral
broadening. While ensemble-level broadening can be minimized by synthetic
tuning to yield monodisperse QD sizes, single QD line widths are broadened
by exciton–phonon scattering and fine-structure splitting.
Here, using photon-correlation Fourier spectroscopy, we extract average
single QD line widths of 50 meV at 293 K for red-emitting InP/ZnSe/ZnS
QDs, among the narrowest for colloidal QDs. We measure InP/ZnSe/ZnS
single QD emission line shapes at temperatures between 4 and 293 K
and model the spectra using a modified independent boson model. We
find that inelastic acoustic phonon scattering and fine-structure
splitting are the most prominent broadening mechanisms at low temperatures,
whereas pure dephasing from elastic acoustic phonon scattering is
the primary broadening mechanism at elevated temperatures, and optical
phonon scattering contributes minimally across all temperatures. Conversely
for CdSe/CdS/ZnS QDs, we find that optical phonon scattering is a
larger contributor to the line shape at elevated temperatures, leading
to intrinsically broader single-dot line widths than for InP/ZnSe/ZnS.
We are able to reconcile narrow low-temperature line widths and broad
room-temperature line widths within a self-consistent model that enables
parametrization of line width broadening, for different material classes.
This can be used for the rational design of more spectrally narrow
materials. Our findings reveal that red-emitting InP/ZnSe/ZnS QDs
have intrinsically narrower line widths than typically synthesized
CdSe QDs, suggesting that these materials could be used to realize
QDLEDs with high color purity.
Wide-bandgap (wide-Eg) perovskites with bandgaps over 1.65 eV have great potential in constructing tandem solar cells (TSCs), however, they still suffer from large open-circuit voltage (VOC) deficits. Phase segregation and...
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