Double loop hysteresis in direct current dependent dielectric permittivity of SrTiO3

“…15 Double hysteresis loops (P-E loops) are an exceptional phenomenon in ferroelectrics (FE), which are often observed in antiferroelectric (AFE) materials. Although double P-E loops are frequently observed in ferroelectric ceramics [16][17][18] and bilayer thin films, 19 there is little work reporting similar characteristics in single layer thin films such as Pb(Zr 0.8 Ti 0.2 )O 3 thin films. Therefore research on the feasible formation of double P-E loops in single-layered ferroelectric thin films and their relation to defect dipoles is of great scientific and technological significance.…”

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confidence: 96%

Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

Zhu

et al. 2011

Journal of Applied Physics

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Pb(Zr0.8Ti0.2)O3 (PZT80/20) thin films were deposited on the Pt(111)/Ti/SiO2/Si(100) substrates by RF magnetron sputtering. Mainly perovskite crystalline phase with highly (202)-preferred orientation, determined by x-ray diffraction, was formed in the lead zirconate titanate (PZT)(80/20) thin films. Polarization measurements of the unannealed and aged films showed a clear double hysteresis loop. However, the double hysteresis loop phenomenon was greatly suppressed in the PZT thin films annealed under pure oxygen, and thus they exhibited larger remnant polarization (Pr = 6.3 μC/cm2). The related mechanism for the appearance of constricted and double hysteresis loops was investigated to be associated with the realignment and disassociation of defect dipoles via oxygen octahedral rotations or oxygen vacancy diffusion. The butterfly-shaped C-V characteristic curve with a valley gave further evidence for double hysteresis loop characteristic in the unannealed and aged PZT thin films.

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“…Actually, Ti 3+ is treated as an unpaired electron loosely bonded to the Ti 4+ ions. Thus, the intensity decreases at 150 °C because the unpaired electron is apt to escape from the coupling configuration to travel freely and easily be trapped by other defects such as the ionized oxygen vacancy V o ·· . , …”

Section: Results and Discussionmentioning

confidence: 99%

Anomalous Dielectric Nonlinearity in Niobium and Aluminum Co-doped SrTiO₃ Ceramics with Giant Permittivity and Low Dielectric Loss

Cao

Tao

et al. 2019

J. Phys. Chem. C

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High dielectric nonlinearity is a basic requirement for various microwave devices, such as tunable oscillators, phase shifters, varactors, etc. This study focuses on the dielectric nonlinearity of Sr(Nb 0.5 Al 0.5 ) x Ti 1−x O 3 paraelectric ceramics, a giant permittivity and low dielectric loss system. The anomalous dielectric nonlinearity (permittivity increases as the DC bias electric field intensifies) was observed under a low electric field (∼5 kV/cm) for the first time, which cannot be explained by previously proposed theories that were applied for ferroelectrics and relaxor ferroelectrics. The abnormal phenomenon occurred at the same temperature region as the polarization and hopping conduction between Ti 3+ and Ti 4+ . Furthermore, the Ti 3+ concentration decreased and the size of the defect dipole increased after the sample was polarized. Compared with being sintered in air, the samples sintered in nitrogen feature a high Ti 3+ concentration, which reduce the starting temperature of anomalous dielectric nonlinearity. It can be proposed that the anomalous dielectric nonlinearity was ascribed to the electronic relaxation polarization and/or produced large defect dipoles of Ti 3+ under a low electric field. These fundamental understandings will provide an innovative way to adjust the dielectric nonlinearity of materials.

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Double loop hysteresis in direct current dependent dielectric permittivity of SrTiO3

Cited by 9 publications

References 16 publications

On-Wafer Measurements of Tuneability in Ba_0.5Sr_0.5TiO₃ Thin Films

On-Wafer Measurements of Tuneability in Ba_0.5Sr_0.5TiO₃ Thin Films

Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

Anomalous Dielectric Nonlinearity in Niobium and Aluminum Co-doped SrTiO₃ Ceramics with Giant Permittivity and Low Dielectric Loss

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Double loop hysteresis in direct current dependent dielectric permittivity of SrTiO3

Cited by 9 publications

References 16 publications

On-Wafer Measurements of Tuneability in Ba0.5Sr0.5TiO3 Thin Films

On-Wafer Measurements of Tuneability in Ba0.5Sr0.5TiO3 Thin Films

Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

Anomalous Dielectric Nonlinearity in Niobium and Aluminum Co-doped SrTiO3 Ceramics with Giant Permittivity and Low Dielectric Loss

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On-Wafer Measurements of Tuneability in Ba_0.5Sr_0.5TiO₃ Thin Films

On-Wafer Measurements of Tuneability in Ba_0.5Sr_0.5TiO₃ Thin Films

Anomalous Dielectric Nonlinearity in Niobium and Aluminum Co-doped SrTiO₃ Ceramics with Giant Permittivity and Low Dielectric Loss