Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics
Abstract:We investigate the high-temperature characteristics of wafer-bonded silicon-on-insulator (SOI)-based Ge film with two different intermediate bonding layers. For an amorphous Ge (a-Ge) bonding layer, due to the crystallization of a-Ge, many gas bubbles appear at the bonded interface to form Ge pits on the SOI. When the wafer pairs are annealed at ⩾400 °C, new gas bubbles appear and merge, leading to cracking of the Ge film due to the fact that the new gas bubbles cannot be transferred sufficiently rapidly out … Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.