Doping, patterning and analysis of tin oxide films using ion beams

Hamdi, Adel; Laugal, R.C.O.; Catalan, Antonio B.; Micheli, Adolph L.; Schubring, Norman W.

doi:10.1016/0040-6090(91)90319-s

Cited by 5 publications

(2 citation statements)

References 14 publications

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“…Another means of creating nanoscale wires in predetermined patterns, although not demonstrated for TCOs, is using 35−100 keV ion beams (e.g., B + , O + , P + , or As + beams) at 5 × 10 14 −10 16 ions cm −2 to locally decompose thin metal−organic blanket films. While this can create highly conductive 250 nm tall metallic structures with linewidths of ∼330 nm, , these structures are at most optically translucent at the densities necessary for integration. Thus, there remains a need for precisely positioned transparent conductive nanowires.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Structure, Composition, and Charge Transport Analysis of Transparent Conducting Oxide Nanowires Written by Focused Ion Beam Implantation

Sosa

Chen

et al. 2010

J. Am. Chem. Soc.

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Realizing optically transparent functional circuitry continues to fuel scientific and technological interest in transparent conducting oxides (TCOs). However, precise means for creating transparent interconnects for device-to-device integration has remained elusive. Here we report on the chemical, microstructural, and electronic properties of transparent conducting oxide nanowires (Ga-doped In2O3) created by direct-write focused ion beam (Ga+) implantation within an insulating oxide substrate (In2O3). First, methodology for preparing TEM-ready samples is presented that enables detailed TEM-based analysis of individual nanowires. Differences in diffraction features between doped and undoped oxide regions, accompanied by RTA results, support a model in which oxygen vacancies and amorphization comprise the predominant doping/carrier creation mechanism. The same isolated nanowires are then subjected to chemical profiling, providing quantitative information on the lateral Ga doping dimensions, which are in good agreement with conductive AFM images. Furthermore, spatially selective nanoscale EELS spectroscopy provides additional evidence for changes in the oxygen site chemical environment in the FIB-processed/doped In2O3, and for negligible changes in the surrounding non-FIB-processed/undoped oxide. The nanowires exhibit ohmic electrical behavior and with an average estimated conductivity of 1600−3600 S cm−1, similar to macroscale Ga-doped In2O3 films grown by conventional processes.

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Section: Introductionmentioning

confidence: 99%

Nanoscale Structure, Composition, and Charge Transport Analysis of Transparent Conducting Oxide Nanowires Written by Focused Ion Beam Implantation

Sosa

Chen

et al. 2010

J. Am. Chem. Soc.

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“…For example, laser ablation [21,22] is highly destructive, and can remove substantial quantities of material. In addition, while ion-beam TCO patterning by decomposition of metal-organic thin films (e.g., metal neodeconoate [23,24] complexes) using B þ , O þ , P þ , or As þ beams at 5 Â 10 14 -10 16 ions cm À2 (35-100 keV) affords structures 250 nm tall with line widths of $330 mm, [23,24] substantial destructive sputtering is expected at such high beam energies, along with deep undesired ion implantation into the substrate. Lastly, in contrast to ITO etching through a patterned photoresist mask, which produces 2.5 mm lines via lift-off, [25] the present work achieves far higher lateral spatial resolution, and leaves the surface essentially intact.…”

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confidence: 99%