Doping of Silicon Crystals with Bi and other Volatile Elements by the Pedestal Growth Technique

Abstract

Monocrystalline, high purity FZ-Silicon doped with bismuth is a promising laser material for the not jet opened up THz-band. With pilldoping during the common FZ-process only a narrow axial part of the crystal could be doped at a sufficient level. Crystals with FZ-like purity and a longer, highly doped section were grown after the well known pedestal technique using a specially developed pill-doping method out from axial holes in the pedestal feed rod being caped by the molten zone. Also doping with lithium and magnesium was done In this way for the first time. The crystals had diameters of 15-20mm using slim 35mm feed rods. Therefore up-scaling of the growth process and, at least for Bi doping, a dislocation-free structure appear achievable.

Atomic clock transitions in silicon-based spin qubits

“…In the silicon samples we study here, Bi donors were introduced during crystal growth using the method developed in Ref [25], with concentrations ranging from 3.6 × 10 14 cm −3 to 4.4 × 10 15 cm −3 . Pulsed-ESR experiments were performed using a spectrometer based around a modified Bruker Elexsys E580 system with a ∼7 GHz loop-gap cavity (for the CT) and 9.75 GHz dielectric resonator.…”

Перестройка спектра терагерцового стимулированного излучения при внутрицентровом оптическом возбуждении одноосно-деформированного Si : Bi

“…Легирование исходного кремния, получаемого бестигельной зонной плавкой, проводилось методом выращивания с пьедестала [9]. Концентрация висмута в кристалле составляла N D ≈ 3 • 10 15 см −3 .…”

Стимулированное Терагерцовое Излучение Доноров Висмута В Одноосно-Деформированном Кремнии При Внутрицентровом Оптическом Возбуждении

“…Легирование исходного БЗП кремния проводилось методом выращивания с пьедестала [6]. Концентрация висмута в кристалле составляла ∼ N D ∼ 3 • 10 15 см.…”