Стимулированное Терагерцовое Излучение Доноров Висмута В Одноосно-Деформированном Кремнии При Внутрицентровом Оптическом Возбуждении

Abstract

The results of the experimental observation of stimulated terahertz emission under optical intracenter excitation of uniaxially strained bismuth-doped silicon are presented. Pumping in the presented experiment is performed using a FELIX free-electron laser. It is shown that uniaxial strain of the silicon crystal leads to a significant change in the stimulated emission spectrum of the impurity.