Doping of semi-insulating and n-type GaAs by neutron transmutation

Abstract

By bombarding GaAs wafers with thermal neutrons it has been possible to introduce a specific constant donor concentration. The radiation damage caused by bombardment can be annealed at temperatures below 800 °C. A room temperature electron mobility of 3900 cm2/Vs has been achieved at an impurity concentration of 5×1017 cm−3. The doping of n−-type layers shows, in addition to the expected doping effect, that the n−-type layer is compensated near the semi-insulating substrate.

Thermal annealing of liquid phase epitaxial gallium arsenide

“…It is surprising that the technique was not applied to GaAs until 1970 (Marianashvii and Nanobashvili) to be followed later in a detailed report by Vesaghi (1982). Recently, studies of NTD treated semi-insulating Czochralski-grown GaAs have been reported by Mueller et al (1980) and Kolin et al (1984), NTD doped bulk-grown by Vigdorovich et al (1981) and Alexiev (1987). It appears that in thermal-neutron transmuted GaAs, radiation damage annealing commences at about 500°C and is completed at about 800°C (Mueller et al (1980) and Yahagi et al (1984)).…”

“…Recently, studies of NTD treated semi-insulating Czochralski-grown GaAs have been reported by Mueller et al (1980) and Kolin et al (1984), NTD doped bulk-grown by Vigdorovich et al (1981) and Alexiev (1987). It appears that in thermal-neutron transmuted GaAs, radiation damage annealing commences at about 500°C and is completed at about 800°C (Mueller et al (1980) and Yahagi et al (1984)). The anti-site As defect is primarily involved in the annealing process (Schneider and Kaufmann (1982)).…”

Ion channeling and Raman scattering studies of the lattice disorder and residual strain in neutron irradiated GaN

“…The NTD method is used as a means of homogeneously introducing impurity atoms into semiconducting materials such as Si, a-Si:H [2], Ge [3], GaAs [4,5], GaP [6,7], InSe [8], GaS [9], GaN [10] and so on. Especially, NTD-Si has already been commercialized as a material for high power devices.…”