2008
DOI: 10.1016/j.mseb.2007.08.020
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Doping of CdS nanoparticles

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Cited by 8 publications
(4 citation statements)
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“…The broad peak at 1•75-1•80 eV (720-700 nm) is associated with a red band related to sulfur vacancies, as a consequence of the doping effect. Undoped CdS films do not show such a broad peak observed on the doped films, being only the bandgap energy peak observed (Osipyonok et al 2008). PL intensity was found to increase with the doping concentration.…”
Section: Photoluminescencementioning
confidence: 72%
“…The broad peak at 1•75-1•80 eV (720-700 nm) is associated with a red band related to sulfur vacancies, as a consequence of the doping effect. Undoped CdS films do not show such a broad peak observed on the doped films, being only the bandgap energy peak observed (Osipyonok et al 2008). PL intensity was found to increase with the doping concentration.…”
Section: Photoluminescencementioning
confidence: 72%
“…2b) evidences that they have more perfect crystalline structure as compared to colloidal CdS nanoparticles whose PL band is broader and can possess additional features in the low-energy side of the spectrum. 32 At the same time, the PL band of the tetrapod crystals is asymmetric and broadened as compared with the PL band of CdS single crystals whose FWHM is 20 nm (ref. 27) (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…To overcome this difficulty, appropriate doping is much desired to tailor the energy band structure and tune the transport properties of the CdS nanostructures. Although efficient n-type doping on CdS thin films has been achieved by using In and Cl as n-type dopants via various methods such as thermal evaporation [10,11], spray pyrolysis [12], chemical bath deposition (CBD) [13,14], post-annealing [15] and so on, controlled doping on CdS nanostructures remains a major challenge and is rarely reported [16].…”
Section: Introductionmentioning
confidence: 99%