Doping of amorphous silicon by potassium ion implantation

Desalvo, A.; Zignani, F.; Galloni, R.; Rizzoli, R.; Ruth, M.

doi:10.1080/13642819308230224

Cited by 4 publications

(1 citation statement)

References 26 publications

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“…They also explained the result in terms of an increase in free carrier concentration that arises from completely ionized defects produced by the irradiation. As presented in [54] and [55], the concept of implantation-induced defects affecting the carrier concentration in crystals can also be generalized to an amorphous lattice considering the formation of dangling bonds. We can use the same arguments to explain the resistivity reduction observed for both the Ne and the Al implantation cases.…”

Section: Electrical Resistivity Measurementsmentioning

confidence: 99%

Ion implantation effects on the microstructure, electrical resistivity and thermal conductivity of amorphous CrSi2 thin films

et al. 2022

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Section: Electrical Resistivity Measurementsmentioning

confidence: 99%