Doping-induced strain in N-doped 4H–SiC crystals

Abstract

Articles you may be interested inA method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images J. Appl. Phys. 116, 104905 (2014); 10.1063/1.4895136 X-ray microbeam three-dimensional topography for dislocation strain-field analysis of 4H-SiC

Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

“…6,7 ͑This type of BPD will be referred to as interfacial dislocations hereafter.͒ The dislocations were determined to be of pure edge type with the Burgers vector of 1 / 3͓11− 20͔ ͑parallel to off-cut direction͒. They could extend to macroscopic distances of several millimeters and are usually terminated at screw-type BPDs.…”

Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography

“…The origin of the strain variation in this wafer is believed to be the non-uniformity in nitrogen doping concentration. According to Jacobson's model, 12 when the isotropic lattice strain varies by De ¼ 3 Â 10 À4 from one end of the wafer to another, the nitrogen doping concentration difference between the two ends will be at least Dn ¼ 6 Â 10 18 cm À3 , which is a reasonable value for heavily doped SiC crystals (10 18 or 10 19 level). Similar analysis has been carried out on the second sample and four strain maps obtained from the two sets of AEg contour maps recorded, as shown in Fig.…”

Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

“…11. Near normal incidence reflectance spectra of (a) non-intentionally doped (No2 Â 10 16 layers by Jacobson et al [26]. According to the authors, the lattice parameter decreases by Da/aE3 Â 10 À4 as the doping level attains 10 19 cm À3 .…”