Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Effect of various factors upon the stoichiometry of GaAs homoepitaxial layers grown by LPE

“…7. Change of the intensities of edge band (Ied) and long-wave bands (1,) of PL spectra within the thickness of the epilayer grown on (1 1 l)A (curves 1 to 5 ) and (1 1 l)B (curves 6 to 10) substrates in original state: Ied(l, 6), 1: (2,7), after annealing: I,, (3,8), 1: (4,9), 1: (5, I,,, and 1: within the whole thickness of the (111)A epilayer (Fig. 7, curves 3 and 4).…”

“…It is known that the growth rate of a GaAs layer on a (111)A face is much larger than on a (111)B face [1, 21. Accordingly, the effective distribution coefficients of the dopant differ substantially [3,4]. It should be expected that the polarity of {111) faces can influence type and concentration of native defects in the epilayers.…”

“…Photoluminescence spectra of GaAs epilayers, grown on (111)A substrates (curves 1, 2) and (111)B substrate (curves 3,4), in original state (curves 1,3), after annealing (curves 2, 4) Carrier concentration change within the thickness of epilayers grown on (111)A (1) and (11 l)B(2) substrates Lattice period change within the thickness of epilayers grown on (11 l)A (curves 1,2) and (111)B (curves 3,4) substrates in original state (1,3) and after annealing (2,4); dashed line calculation according to Vegard's law…”

Investigation of the doping level in overcompensated p-GaP layers grown by liquid phase epitaxy

“…Evaporated contacts were prepared, and those diodes were utilized for conceutration measurement, the Iq 2 vs V curves of which were strictly linear, and in which ~ ~ 1.10 in the rclation I ~ exp qV/~TkT describing the forward current characteristics of the diodes [28], where q is the electronic charge and k is the Boltzmann constant. The production of Schottky barrier diodes with appropriately small values is a fairly complex procedure, and much experimental experience confirms [29,30] that simpler procedures, which leave a comparatively thick oxide layer between the metal and the semiconductor and hence yield a diode r] value larger than that expected theoretically, can result in surfaee barriers which ate still usable for concentratiou measurement.…”

Control of Zn Doping for Growth of InP pn Junction by Liquid Phase Epitaxy

“…When Zn is chosen as p-type dopant in the LPE growth, however, one should pay attention to its high vapor pressure as well as to the relatively high diffusion coefficient in the semiconductor bulk at the growth temperature. The evaporation of Zn in the Ga melt during GaP growth has resulted in the carrier density profile decreasing toward the epitaxial layer surface (4). The misplacement of the pn junction observed in the GaAs (5) and the InP (2) homojunctions and the InP=Inl-xGaxAsl-yPy heterojunction (6) is considered to be attributable to either the Zn diffusion during the p +-type layer deposition or to the cross-contamination of melts caused by the Zn evaporation.…”