Doping effect on the physical properties of zinc oxide thin films

Gómez, H.; González, José; Torres, Gonzalo Alberto; Maldonado, A.; Olvera, M. de la L.

doi:10.1109/iceee.2012.6421185

Cited by 2 publications

(1 citation statement)

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“…Depending on the deposition methods and conditions, different dopants result in distinctive film properties. For spray pyrolysis-a versatile and low-cost solution-based deposition technique-it was shown that doping with In promotes lower film resistivity compared to Al or Ga, even at low In concentrations [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Rapid Processing of In-Doped ZnO by Spray Pyrolysis from Environment-Friendly Precursor Solutions

et al. 2019

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This study focused on the deposition of indium-doped zinc oxide (IZO) films at high growth rates by ultrasonic spray pyrolysis. We investigated the influence of processing parameters, such as temperature and solution flow rate, on the structural, optical, and electrical film properties. For all depositions, low-cost and low-toxicity aqueous solutions and metal salt precursors were used. Through the optimization of the spraying parameters and pattern, a spatially homogeneous IZO layer with transparency greater than 80%, resistivity of 3.82 × 10−3 Ω·cm for a thickness of 1800 nm (sheet resistance of 21.2 Ω/sq), Hall carrier density of 1.36 × 1020 cm−3, Hall mobility of 12.01 cm2 V−1 s−1, and work function of 4.4 eV was obtained. These films are suitable for implementation in optoelectronic and photovoltaic devices.

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Section: Introductionmentioning

confidence: 99%