1991
DOI: 10.1149/1.2085358
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Doped Silicon Oxide Deposition by Atmospheric Pressure and Low Temperature Chemical Vapor Deposition Using Tetraethoxysilane and Ozone

Abstract: a b s t r a c tLittle is known about the prevalence of hepatitis C virus (HCV) among healthcare workers (HCW) in Egypt, where the highest worldwide prevalence of HCV exists. The prevalence of HCV, hepatitis B virus and Schistosoma mansoni antibodies was examined in 842 HCWs at the National Liver Institute in the Nile Delta, where >85% of patients are HCV antibodypositive. The mean age of HCWs was 31.5 years and they reported an average of 0.6 ± 1.2 needlesticks/HCW/year. The prevalence of anti-HCV, hepatitis … Show more

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Cited by 24 publications
(10 citation statements)
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“…Boron appears to accelerate water penetration of the Fig. 15. Water desorption from PSG with 8.5 w/o P and BPSG with high and low phosphorus concentrations after 100 h in the P film and phosphorus suppresses it.…”
Section: Discussionmentioning
confidence: 97%
“…Boron appears to accelerate water penetration of the Fig. 15. Water desorption from PSG with 8.5 w/o P and BPSG with high and low phosphorus concentrations after 100 h in the P film and phosphorus suppresses it.…”
Section: Discussionmentioning
confidence: 97%
“…It was shown that TEOS is able to react with oxygen at atmospheric pressure conditions providing a low silicon dioxide deposition rate at temperatures as low as 450ЊC. 43 According to numerous reports, [9][10][11]34 higher silicon dioxide film deposition rates can be achieved by the introduction of ozone into the gas mixture with concentrations above 1 wt %. In contrast, there is no information about the enhancement of dopant precursors oxidation rate with ozone.…”
Section: Discussionmentioning
confidence: 99%
“…Thus, PSG films with higher than about 4 wt% phosphorus become less tensile stressed do not depending on the film growth techniques. Note that data for TEOS-ozone PSG shown in Table IV 48,49 are in agreement, but not displayed in Figs. 5a, 5b.…”
Section: Summary Of Data For Apcvd Lpcvd Pecvd Thin Filmsmentioning
confidence: 87%
“…The only exception with compressive stress is the data point obtained at very low SACVD process pressure 22.5 Torr and deposition temperature 375 °C. 38 Scarce data for binary glasses 48,49 obtained using I). The absence of experimental data in the range of 0-3 wt% of phosphorus allows making some assumption regarding the possible stress behavior in this concentration range.…”
Section: Summary Of Stress Data For Ozone-based Thin Filmsmentioning
confidence: 99%