Growth kinetics of borophosphosilicate glass (BPSG) films prepared by the chemical reaction of tetraethylorthosilicate (TEOS), triethylborate, and triethylphosphate, with ozone‐oxygen mixture has been studied using a single‐wafer deposition chamber at 373–458°C under reduced pressure or subatmospheric pressure condition (SABPSG). Based on the comparison of the effective reaction rate constants and other kinetic features, the similarity of BPSG deposition kinetic for different types of precursors and deposition conditions are shown. Fourier transform infrared spectroscopy, X‐ray fluorescence analysis, secondary ion mass spectrometry, stress measurement, optical microscopy, scanning electron microscopy, atomic force microscopy, surface laser scanning, capacitance‐voltage, current voltage, and surface charge analysis techniques have been used for the characterization of SABPSG film properties. Moisture absorption and surface defect formation phenomena have been studied for both as‐deposited and furnace annealed films with boron and phosphorus ranging from 3 to 6 wt %. The liquid state, solid state, and crystalline BPSG surface defects have been characterized and their relationships have been shown. A multipath and multistep reaction mechanism scheme of TEOS‐ozone BPSG deposition process with the formation of active intermediate products, a scheme of porous TEOS‐ozone BPSG film with embedded dopant‐rich clusters, and a scheme of defect formation and growth on BPSG films are discussed. Empirical equations of quantitatively optimized BPSG dopant concentration range are presented by taking into account flow properties, defect formation, and moisture absorption processes in the film. © 1999 The Electrochemical Society. All rights reserved.

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This paper is devoted to the analysis of relationships between chemical vapor deposition ͑CVD͒ features and silicon dioxide and silicate glass film properties and structures. Deposition processes have been quantitatively characterized using an empirical parameter the effective constant of the deposition rate, K eff . The observed CVD kinetic features are explained by using a simplified multiroute and multistep kinetic scheme of the silicon-based thin-film gas-phase deposition processes, and a classification of the studied processes. The basic physical and chemical properties of thin glass films are explained in terms of the glass structural disordering, which defines the oxide film density, wet etch rate, shrinkage, and intensity of film-moisture interaction. The structure disordering depends in reverse order with respect to K eff . It is shown that the borophosphosilicate glass ͑BPSG͒ film structure and properties are affected by the quantity of boron atoms with a threefold coordination with respect to the oxygen atoms. The boron coordination in BPSG film tends to change from threefold to fourfold coordination along with the increase of phosphorus to boron ratio in the film. The best BPSG structural ordering and the best film properties correspond to the boron concentrations defined by an empirical equation ͓B͔ р 0.4͓P͔. The respective glass film structure is supposed to consist of SiO 4 , PO 4 , and BO 4 tetrahedra.Thin films of silicon dioxide and phosphosilicate glass ͑PSG͒, borosilicate glass ͑BSG͒ and borophosphosilicate glass ͑BPSG͒ are used in Ultralarge-Scale integrated ͑ULSI͒ circuit technology for shallow trench isolation, spacer isolation, premetal and intermetal dielectric isolation, final device passivation, etc. These dielectric films are deposited using a variety of precursor combinations and gas-phase deposition methods, such as atmospheric, subatmospheric, or low-pressure chemical vapor deposition ͑APCVD, SACVD, and LPCVD, accordingly͒, plasma-enhanced deposition ͑PECVD͒, high-density plasma deposition ͑HDP-CVD͒, etc. Despite a number of published papers regarding thin-film deposition processes and film properties, just a few technologically oriented attempts have been made in order to summarize the accumulated experimental data. 1-6 These reviews cannot be considered to be sufficient enough; for instance, until recently there are no summaries devoted to the correlation of film properties and film structures with gas-phase deposition features. In this paper, an attempt is made to consolidate our previously published data 5-30 in order to define these relationships. Cited papers have been focused on the investigation of SiO 2 , PSG, BSG, and BPSG films deposition kinetics, 7-12 BPSG films flow properties, 11,13-18 PSG and BPSG moisture absorption effects, 11,19-24 BPSG defect formation phenomenon, 11,25 glass film electrical properties, 26,27 PSG and BPSG gap-fill issues, 9,11,12,[20][21][22][23][28][29][30] and quantitative optimization of BPSG film composition. 11,15,16 Chemical bonding and str...

Penetration of the electromagnetic field through plate-shaped bulk polycrystalline sintered Pb and Y–Ba doped manganite samples is studied in the frequency range from 20 kHz to 30 MHz. Strong magnetic-field dependence of the transmission coefficient is observed. The penetration data are compared with the other magnetic-field dependent parameters: the magnetic permeability, magnetoresistance, and magnetoimpedance. Unusual frequency dependence of the penetration depth is observed.

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