Doped Layer Optimization for Silicon Heterojunctions by Injection-Level-Dependent Open-Circuit Voltage Measurements

Bivour, Martin; Reusch, Markus; Schröer, Sebastian; Feldmann, Frank; Temmler, Jan; Steinkemper, Heiko; Hermle, Martin

doi:10.1109/jphotov.2013.2294757

Cited by 65 publications

(53 citation statements)

References 42 publications

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“…This evidence supports the belief that the WF of the n-type TCO, being lower than the one of a-Si:H(p), may result rather in a Schottky than an ohmic contact, causing a V oc drop and resistive losses under solar cell operation conditions [39], [42]. The value of n at 100 suns (n 100 ) was proposed as indicator for the strength of this effect [4].…”

Section: B Effects On Operating Voltage 1) High-low Suns-v Oc Curvessupporting

confidence: 77%

“…Earlier, the high-illumination suns-V oc data were argued to be a useful diagnostic tool to characterize back-contacts in diffused homojunction c-Si devices [41]. Later on, as already mentioned in Section I, the same approach was also applied for the characterization of the a-Si:H(p)/TCO interface in SHJ devices [3], [4]. For such samples, a lowering of the measured V oc at high illumination intensities was sometimes observed.…”

Section: B Effects On Operating Voltage 1) High-low Suns-v Oc Curvesmentioning

confidence: 99%

“…This way, the impact of the TCO quality as contact layer on FF can be assessed, independent of its lateral conductivity properties. For this configuration, experimental results [4], [46], [47] indicate that for high FFs (and high n 100 [4]), sufficiently conductive TCO films are needed to contact the a-Si:H(p) layer. Such high TCO conductivities are needed for low contact resistivities.…”

Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

“…These seemingly competing requirements have both implications toward the FF of high-efficiency SHJ devices. However, the FF loss observed for lowly doped TCO-contact films [4], [46], [47] cannot be explained by their higher WF, which instead should mitigate possible detrimental "Schottkycontact" effects [39], [42].…”

Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

“…The V oc at low illumination intensity (<1 suns) is directly affected by surface passivation. Conversely, tracking the V oc of SHJ devices under very high illumination intensities (>10 suns) has been argued to give insight in the carrier extraction properties of the involved contacts, especially at the a-Si:H(p)/TCO interface [3], [4]. Here, to identify possible correlations between the TCO impact on surface passivation and on carrier extraction, we study V oc at high and low illumination intensities, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Tomasi

Sahli

Seif

et al. 2016

IEEE J. Photovoltaics

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Abstract-Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. Based on our findings, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

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Section: B Effects On Operating Voltage 1) High-low Suns-v Oc Curvessupporting

confidence: 77%

Section: B Effects On Operating Voltage 1) High-low Suns-v Oc Curvesmentioning

confidence: 99%

Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Tomasi

Sahli

Seif

et al. 2016

IEEE J. Photovoltaics

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show abstract

Passivated Contacts

Hermle

2016

Photovoltaic Solar Energy

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Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

Li,

Xu,

Yan

et al. 2024

Advanced Energy Materials

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Solar photovoltaics (PV) are poised to be crucial in limiting global warming by replacing traditional fossil fuel generation. Within the PV community, crystalline silicon (c‐Si) solar cells currently dominate, having made significant efficiency breakthroughs in recent years. These advancements are primarily due to innovations in solar cell technology, particularly in developing passivating contact schemes. As such, this review article comprehensively examines the evolution of high‐efficiency c‐Si solar cells, adopting a historical perspective to investigate the advancements in passivation contact techniques and materials to state‐of‐the‐art cell designs. Additionally, this work deeply studies the recent advances and critical design principles underlying each developed passivation scheme. Eventually, this work identifies existing challenges and proposes insights into future directions for c‐Si solar cells through diverse passivating contact strategies.

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Doped Layer Optimization for Silicon Heterojunctions by Injection-Level-Dependent Open-Circuit Voltage Measurements

Cited by 65 publications

References 42 publications

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Passivated Contacts

Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

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