Dopants and defects in InN and InGaN alloys

Walukiewicz, W.; Jones, R. E.; Li, S.X.; Yu, K. M.; Ager, Joel W.; Häller, E. E.; Lu, Hai; Schaff, William J.

doi:10.1016/j.jcrysgro.2005.12.082

Cited by 12 publications

(4 citation statements)

References 16 publications

(17 reference statements)

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“…Moreover, the lower indium component is, the smaller saturation value is Ref. 39. Compared with the increase of effective carriers caused by donor like defects, the decrease of effective carriers caused by Ga vacancies may be more serious.…”

Section: Sample Group Imentioning

confidence: 99%

Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

Li¹,

Shan²,

Zheng³

2020

ECS J. Solid State Sci. Technol.

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The statistical photoelectric properties of InGaN/GaN MQWs solar cells under proton irradiation were studied. Three groups of devices were irradiated with 3 MeV proton beams with fluences of 1.0 × 1011 cm−2, 5.0 × 1011 cm−2, and 1.0 × 1012 cm−2. Averaged experiment results showed that the open circuit voltage (VOC) and fill factor (FF) always decreased. In contrast, the short circuit current density (JSC) and photoelectric conversion efficiency (η) increased first and then decreased with the increase of fluence. Firstly, the donor-like defects of InGaN layer in active region played a major role in increasing JSC and η when the fluence was relatively low. Due to the introduction of donor-like defects, extra free electrons were produced, which lead to an increase in the number of effective carriers. With the further increasing of proton fluence, the number of free electrons caused by donor-like defects in the used InGaN material (low indium component) increased slowly due to pinning effect. However, additional point defects (Ga vacancies) increased significantly. Ga vacancies can act as effective non-radiative recombination centers, thereby reducing the number of effective carriers. The combined effect of pinning effect and non-radiative recombination process is responsible for the first increase and subsequent decline of JSC and η.

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Section: Sample Group Imentioning

confidence: 99%

Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

Li¹,

Shan²,

Zheng³

2020

ECS J. Solid State Sci. Technol.

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“…8 In recent years, research by many groups has addressed many of these challenges. [8][9][10] However, growth of InGaN with p-type characteristics with sufficient quality for devices continues to be a barrier to achieving high quality InGaN devices with high mole fraction In material.…”

Section: Introductionmentioning

confidence: 99%

Inducing a junction in n-type InxGa(1−x)N

Williams

Williamson

Hoffbauer

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition J. Vac. Sci. Technol. B 31, 051208 (2013) Discrepancies in the nature of nitrogen incorporation in dilute-nitride GaSbN and GaAsN films J. Vac. Sci. Technol. B 31, 051206 (2013) On the environmental stability of ZnO thin films by spatial atomic layer deposition J. Vac. Sci. Technol. A 31, 061504 (2013) Growth of high quality ZnO thin films with a homonucleation on sapphire J. Vac. Sci. Technol. B 31, 041206 (2013) Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water

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“…However, devices with a p-n junction have not yet been realized because it is difficult to obtain low-resistivity p-type InN. When Mg, which is a prime candidate for a p-type dopant, is doped to InN, the conductivity has been n-type or insulating [5][6][7][8]. It is now discussed that the cause is not only carrier compensation by residual impurities but also generation of a surface electron accumulation layer [7].…”

mentioning

confidence: 99%

“…When Mg, which is a prime candidate for a p-type dopant, is doped to InN, the conductivity has been n-type or insulating [5][6][7][8]. It is now discussed that the cause is not only carrier compensation by residual impurities but also generation of a surface electron accumulation layer [7]. Additionally, it is necessary to clarify whether Mg atoms occupy the substitutional sites of In atoms in InN and act as acceptors in order to determine what prevents p-type conductivity.…”

mentioning

confidence: 99%

Determination of the Mg occupation site in MOCVD‐ and MBE‐grown Mg‐doped InN using X‐ray absorption fine‐structure measurements

Miyajima

Uemura

Kudo

et al. 2008

Phys. Status Solidi (c)

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We analyzed the atomic structure around Mg atoms in MOCVD‐ and MBE‐grown Mg‐doped InN using Mg K‐edge X‐ray absorption fine‐structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p‐type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Dopants and defects in InN and InGaN alloys

Cited by 12 publications

References 16 publications

Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

Inducing a junction in n-type InxGa(1−x)N

Determination of the Mg occupation site in MOCVD‐ and MBE‐grown Mg‐doped InN using X‐ray absorption fine‐structure measurements

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