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Dopant‐Type Selective Electroless Photoetching of Zn‐Diffused InP and InGaAs / InP Heterostructures
Abstract: Localized electroless photoetching is used successfully to visualize the p‐n junction in Zn‐diffused normalInP and normalInGaAs/normalInP heterostructures. This technique is superior to normalKFeCN‐normalbased etching due to greater dopant selectivity and low dark etch rate.
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2002
2002
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