Dopant diffusion in silicon: A consistent view involving nonequilibrium defects

Mathiot, D.; Pfister, J. C.

doi:10.1063/1.332941

Cited by 228 publications

(65 citation statements)

References 46 publications

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“…In this frame, the simplest modeling of a boron cluster is given by : B s + B i tt B sBi , where the cluster is considered as immobile and in nonequilibrium. Such cluster has been already proposed in a static form [2] or a dynamic one [3] as chosen here. This adds a sixth equation to the system.…”

Section: The Point-defect Diffusion Modelmentioning

confidence: 99%

Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions

Baccus¹,

Vandenbossche²

1993

Simulation of Semiconductor Devices and Processes

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Boron diffusion and activation at high concentrations are key problems in the formation of shallow P+ junctions. Therefore, it is needed to understand and to predict accuratly the dopant behaviour under these conditions. In this paper, the modeling of boron is discussed, by the use of a non-equilibrium pointdefect model, including amorphization and a dynamic clustering component. The initial conditions are of major importance not only for the transient enhanced diffusion, but also for the amount of active dopant. As a result, it is possible to obtain activation levels greater than the solubility limit, as observed experimentally. The point-defect diffusion modelA non-equilibrium point defect-model has been used throughout the study. It solves rigorously the interactions between dopants and point-defects (including charged species) and takes into account the ion implantation damage. Five coupled equations are needed to solve the diffusion of boron : substitutional boron Bs, interstitial boron Bi, interstitial I, vacancy V, and Poisson equation [I]. In this frame, the simplest modeling of a boron cluster is given by : B s + B i tt B sBi , where the cluster is considered as immobile and in nonequilibrium. Such cluster has been already proposed in a static form [2] or a dynamic one [3] as chosen here. This adds a sixth equation to the system. It is possible to include clusters containing more atoms, but it does not give a significant improvement. Initial conditionsIn the case of high-dose boron ion implantation, it is difficult to determine exactly the initial conditions. There is no amorphization, however it is known that extended defects can appear as well as activation levels greater than the solubility limit (Csol) [4]. The modeling

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Section: The Point-defect Diffusion Modelmentioning

confidence: 99%

Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions

Baccus¹,

Vandenbossche²

1993

Simulation of Semiconductor Devices and Processes

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“…The Classical Dopant Diffusion model [7] takes into account all the known couplings existing between the dopant and point defects (Self interstitials and Vacancies). All the charge states experimentally established for both the point defects and dopant/ defects pairs are considered.…”

Section: Volume 15 Number 5 May 2005mentioning

confidence: 99%

A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

Boucard¹,

Roger²,

Chakarov³

et al. 2005

Materials Science and Engineering: B

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“…1976-1984(1991] in Table I, column 1, 5m = 1 should be ~k m -'~ 1; in column 2, 5p = 1 should be k~ = 1 and E~ q should be E~ q = -0.9058 V; and in column 3 ir in A/cm 2, ~c in volts. Equations [18] and [19] should be …”

Section: Erratamentioning

confidence: 99%

Erratum: “Transport Phenomena in Tungsten LPCVD in a Single‐Wafer Reactor” [J. Electrochem. Soc., 138, 509 (1991)]

Kleijn¹,

Hoogendoorn²,

Hasper³

et al. 1991

J. Electrochem. Soc.

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Ksurf. 0 = le-6 Ksurf. E = 0; vacan silicon/gas Ksurf. 0 = le-6 Ksurf. E = 0.We have set the value of the recombination constant, not applicable to FINDPRO, Eq.[15]: inter silicon Kr. 0 = le-12 Kr. E = 0; vacan silicon Kr. 0 = le-12 Kr. E = 0. In fitting the data for Fig. 1, the only fitting parameters have been/(i, ~p, Dl~ and the electrically active portion of the total P which we have taken to saturate at 2.5 x 1020 cm -3. We set the solubility of P in SUPREM-IV above this phos ss. temp = 874 ss. conc = le21We set the transfer coefficient for P from the gas to Si at a high value phos silicon/gas Trn. 0 = le3 Trn. E = 0 Finally, we eliminated the traps from SUPREM-IV trap silicon total = 0 frac. 0 = 0 In both programs the 1-D mesh was set to extend at least to 60 microns, a point at which, for these parameters, I did not increase from its initial equilibrium value I0. REFERENCES 1. a. R. W. Knepper, S. P. Gauer, F.-Y. Chang, and G. R.Srinivasan, IBM J. Res. Dev., 29, 218 (1985).b. G. P. Ho, J. D. Plummer, S. E. Hansen, and R. W.Dutton, IEEE Trans. Electron Devices, ED-39, 1438ED-39, (1983.2. S. M. Hu, J. Appl. Phys., 57, 4527 (1985). 3. S. M. Hu, P. Fahey, and R. W. Dutton, ibid., 54, 6912 (1983).4. T. Y. Tan, U. G6sele, and F. F. Morehead, Appl. Phys., A31, 97 (1983).5. D. Mathiot and J. C. Pfister, J. Appl. Phys., 55, 3518 (1984).6. M. Orlowski, Appl. Phys. Lett., 53, 1323Lett., 53, (1988. 7. M. R. Kump and R. W. Dutton, IEEE Trans. ComputerAided Design, 7, 191 (1988 Lett., 53, 1917 (1988 Ot \ Ox ~ ] \--~x /where K = e~, ~/= F/RT, and 9 is the electric field strength, dr In the original version, 9 was defined as -dr and the signs before the last terms in Eq.[12] and [13] are opposite to those printed above. However, all subsequent equations are correct and the findings of the work are unchanged.In the paper "Transport Phenomena in Tungsten LPCVD in a Single-Wafer Reactor," by C. R. Kleijn, C. J. Hoogendoorn, A. Hasper, J. Holleman, and J. Middelhoek [This Journal, 138, 509-517 (1991)] the following corrections should be made:In the 5th and 6th lines of the Abstract and in the 8th line of the right column on page 513 "with the WF6 inlet pressure" should read "with decreasing WF~ inlet pressure."In the left column of page 510, the reference in the 22nd line from the bottom should be (41).In In the caption for Fig. 4, "mole predictions" should be "model predictions."In the List of Symbols, the unit g should be in m -s-2; I should be I, vin should be v~., and superscript c should be C.In Ref. (1,4,15,17, 43), B. Blewer should be R. S. Blewer.In the paper "Modeling Calculations of an AluminiumAir Cell" by Kwong-Yu Chan and Robert F. Savinell [This Journal, 138, pp. 1976-1984(1991] in Table I, column 1, 5m = 1 should be ~k m -'~ 1; in column 2, 5p = 1 should be k~ = 1 and E~ q should be E~ q = -0.9058 V; and in column 3 ir in A/cm 2, ~c in volts.

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Dopant diffusion in silicon: A consistent view involving nonequilibrium defects

Cited by 228 publications

References 46 publications

Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions

Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions

A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

Erratum: “Transport Phenomena in Tungsten LPCVD in a Single‐Wafer Reactor” [J. Electrochem. Soc., 138, 509 (1991)]

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