Dopant and Alloying Effects in Gamma Irradiated GaAs Light Emitters

Effects of γ irradiation on double-heterostructure AlGaAs light-emitting diodes: Opposing emission and absorption edge wavelength shifts

“…The direction of wavelength shift is opposite to that of surface effects,4.5 and the shift itself is much larger than that attributed to bulk effects in GaAs (1-4 nm). 3 Using a halogen lamp as a white light source, the LED's were illuminated with light at different wavelengths, using the monochromator again as a variable wavelength filter. A long wavelength pass filter passing only light of wavelengths larger than 700 nm was also used so as to minimize effects of second-order light passing through the monochromator.…”

“…(2) the emission linewidth ,u.; (3) the barrier height which affects the carrier confinement; (4) the amount of light absorption; and (5) the 1-V curve. In addition, the refractive index, which depends on x, can affect ( 1) the degree of optical confinement waveguiding (at the active layer), and (2) the critical angle at which the light is emitted at the surface.…”