Donor gettering in GaAs by rare-earth elements

Raczyńska, J.; Fronc, K.; Langer, Judith; Lemańska, A.; Stapor, A.

doi:10.1063/1.99825

Cited by 38 publications

(16 citation statements)

References 17 publications

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“…This result clearly shows that doping of GaA8 with Yb during i.e. liquid phase epitaxy cannot be successful, as it was reported in [4], because the Yb atoms always accumulate in the melt near the growth front.…”

Section: Yb In Gap' Gaas and Algaasmentioning

confidence: 58%

“…This can be turned into advantage, however, in the purification of the materials grown from the melt (i.e. liquid phase epitaxy) in the presence of REs [4]. Also, the tendency of association of RE atoms with other chemical dopants and lattice defects may have a beneficial effect on the increase in the excitation efficiency of the intrashell luminescence of REs in semiconductors.…”

Section: Introductory Remarksmentioning

confidence: 99%

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Implantation of Rare-Earth Atoms into Si and III-V Compounds

1993

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Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 10 18 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.PACS numbers: 61.80. Jh, Introductory remarksRecently we witness a burst of interest in the doping of Si and III-V compound semiconductors with rare earths (RE). The attention to these exotic dopants was attracted by their potential utilization in constuction of novel light emitting devices (LEDs). Rare earth doped semiconduction are expected to combine the well-known sharp, temperature stable, ultra narrow, atomic-like emission originating from the electronic transitions within the 4f shell of RE impurities with the efficient electrical pumping of this emission by electrons and holes. The inherently long lifetime of the 4f emission limits a possible light output from these devices to small power in a microwatt range. However, if RE doping of Si would result in the constuction of non-degrading efficient LEDs, even with a moderate quantum efficiency at room temperature, then this could lead to a real intrachip (59) 60A. Kozanecki' J.M. Langer' A.R. Peaker optical communication -a long awaited technological goal in the field of VLSI circuits [1,2].Rare earths are very often used as the light emitting centres in wide energy gap ionic crystals and glasses. In fact, most powerful solid state lasers are made of an Nd doped glass. REs are also often utilised in other solid state lasers. In all these cases high dopant concentration is achieved during the crystal or glass growth by adding required amounts of appropriate RE compound to the melt from which a laser rod is pulled out.In semiconductor devices, the active volume is much smaller and planar technologies dominate processing. Very low solubility of REs in covalent semiconduction narrows the range of available technologies of the growth of RE doped semiconduction to non-equilibrium techniques. Among them, two are feasible. One bases on metalloorganic chemical vapour deposition (MOCVD) -a standard technology for semiconductor growth. Initial problem of finding suitable RE compound which would crack in the MOCVD reactor seems to be finally resolved. This technology has been mastered particularly by the group of. K. Takahei [3]. Alternative technology, most suitable for Si doping with REs, is ion implantation, which will be the main topic of our review.Additional problem related to RE doping of Si and III-V compounds is caused by extremely high chemical activity of the RE elements, particularly their notorious affinity to oxygen and other group-VI elements. This can be turned into advantage, however, in the purification of the materials grown from the melt (i.e. liquid phase epitaxy) in the presence of REs [4]...

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Section: Yb In Gap' Gaas and Algaasmentioning

confidence: 58%

Section: Introductory Remarksmentioning

confidence: 99%

Implantation of Rare-Earth Atoms into Si and III-V Compounds

1993

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“…Erbium (Er) and Ytterbium (Yb) were mostly studied RE elements [1][2][3][4] in this context. In most cases, however, the atoms or ions of f-elements just do not enter the substitutional or interstitional sites of the lattice [5,6] due to their low solubility in crystalline semiconductors.…”

Section: Introductionmentioning

confidence: 97%

Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt

Zavadil¹,

Procházková²,

Gladkov³

2005

Cryst. Res. Technol.

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InP single crystals were grown by liquid phase epitaxy on semi-insulating InP:Fe and n-type InP:Sn substrates with cerium, thulium and lutetium additions to the growth melt. Grown layers were examined by low-temperature photoluminescence spectroscopy and C-V measurements. Layers prepared with the addition of Ce and Tm exhibit the change of electrical conductivity from n to p, while those grown with Lu admixture remain n-type. Ce has been found to be incorporated into the InP lattice and sharp luminescence arising from 2 F 7/2 → 2 F 5/2 inner shell transitions of Ce 3+ at 3600 nm was detected. The highest purifying effect due to RE addition has been found for Tm admixture, where the impurity concentration was decreased by three orders of magnitude and fine spectral features were revealed by photoluminescence spectroscopy. The addition of Tm into the growth melt enables to prepare thick and pure InP layers of p-type conductivity -a material promising in the context of semiconductor radiation detectors.

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“…The main motivation to dope CdTe with Yb is based on the ability of rare earth elements to reduce impurities, which was observed in III-V materials like InP [8,9] and GaAs [10]. Here the purification of the as-grown crystals and LPE layers after doping with rare-earth elements (Eu, Yb, Ho) was confirmed from photoluminescence (changes in the intensity of neutral donor-and acceptor-bound excitons, narrowing of the exciton lines) and low-temperature galvanomagnetic measurements.…”

Section: Introductionmentioning

confidence: 99%