Donor–Acceptor Poly(3‐hexylthiophene)‐block‐Pendent Poly(isoindigo) with Dual Roles of Charge Transporting and Storage Layer for High‐Performance Transistor‐Type Memory Applications

Abstract

Field‐effect transistor memories usually require one additional charge storage layer between the gate contact and organic semiconductor channel. To avoid such complication, new donor–acceptor rod–coil diblock copolymers (P3HT44‐b‐Pison) of poly(3‐hexylthiophene) (P3HT)‐block‐poly(pendent isoindigo) (Piso) are designed, which exhibit high performance transistor memory characteristics without additional charge storage layer. The P3HT and Piso blocks are acted as the charge transporting and storage elements, respectively. The prepared P3HT44‐b‐Pison can be self‐assembled into fibrillar‐like nanostructures after the thermal annealing process, confirmed by atomic force microscopy and grazing‐incidence X‐ray diffraction. The lowest‐unoccupied molecular orbital levels of the studied polymers are significantly lowered as the block length of Piso increases, leading to a stronger electron affinity as well as charge storage capability. The field‐effect transistors (FETs) fabricated from P3HT44‐b‐Pison possess p‐type mobilities up to 4.56 × 10−2 cm2 V−1 s−1, similar to that of the regioregular P3HT. More interestingly, the FET memory devices fabricated from P3HT44‐b‐Pison exhibit a memory window ranging from 26 to 79 V by manipulating the block length of Piso, and showed stable long‐term data endurance. The results suggest that the FET characteristics and data storage capability can be effectively tuned simultaneously through donor/acceptor ratio and thin film morphology in the block copolymer system.

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

“…Most reported FGOTM was based on conventional planar architecture with micrometer channel lengths and rigid substrate, which severely limited their driving ability, operating speed, and application in flexible electronics . In the conventional planar FGOTM, the performance of the FGOTM was often limited by two intrinsic factors: the organic semiconductor materials and planar device structure.…”

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

“…The azido-terminated Piso (4a-d, N 3 -Piso n (n = 10, 20, 60 and 100, respectively)) coils, on the other hand, were synthesized with various lengths. 30 The rod-coil diblock copolymers, PF 14 -b-Piso n s (5a-d), were synthesized through the Cu-catalyzed azido-alkyne click reaction of PF 14 and N 3 -Piso n s, and Fourier transform infrared spectroscopy was employed to determine whether the reaction was completed (Supplementary Figure S2). Four polymers with different coil lengths were successfully produced, and their polymer properties are listed in Table 1.…”

Recent advances in organic‐based materials for resistive memory applications

“…Polymer‐based materials are another class of promising contenders for the development of novel resistive memory devices 17,43,44,49,74,108,111‐129 . Polymer functional materials possess similar advantages to organic small molecules, such as low cost, good flexibility, and ease of processing, which can serve as alternatives or supplements to their inorganic counterparts 43,111‐120 .…”

“…Moreover, the memory device performance of single‐component polymers can also be well modulated by structural tuning and/or postprocessing 43,74,116,122 . For instance, Yen et al synthesized a series of single‐component benzodithiophene‐based D/D and D/A‐type conjugated polymers and successfully acquired thermally recoverable WORM memory behavior by adjusting the number of thienyl donors in the side chains 116 .…”