Domain wall pinning in a circular cross-section wire with modulated diameter

Riz, A. De; Trapp, B.; Fernández-Roldán, José Ángel; Thirion, C.; Toussaint, Jean-Christophe; Fruchart, Olivier; Gusakova, D.

doi:10.1016/b978-0-08-102832-2.00015-3

Cited by 5 publications

(2 citation statements)

References 48 publications

(65 reference statements)

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“…Therefore, the magnetic domains will only propagate to the adjacent segment if the vector u is high enough. Previously reported u values are in the range of 100-600 m/s [27,44]. In this work, two different velocities have been used to displace the magnetic domains, attending whether the storage segments have magnetocrystalline anisotropy or not.…”

Section: Bit Movementmentioning

confidence: 99%

A Novel Design of a 3D Racetrack Memory Based on Functional Segments in Cylindrical Nanowire Arrays

Rial

Proença

2020

Nanomaterials

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A racetrack memory is a device where the information is stored as magnetic domains (bits) along a nanowire (track). To read and record the information, the bits are moved along the track by current pulses until they reach the reading/writing heads. In particular, 3D racetrack memory devices use arrays of vertically aligned wires (tracks), thus enhancing storage density. In this work, we propose a novel 3D racetrack memory configuration based on functional segments inside cylindrical nanowire arrays. The innovative idea is the integration of the writing element inside the racetrack itself, avoiding the need to implement external writing heads next to the track. The use of selective magnetic segments inside one nanowire allows the creation of writing and storage sections inside the same track, separated by chemical constraints identical to those separating the bits. Using micromagnetic simulations, our study reveals that if the writing section is composed of two segments with different coercivities, one can reverse its magnetization independently from the rest of the memory device by applying an external magnetic field. Spin-polarized current pulses then move the information bits along selected tracks, completing the writing process by pushing the new bit into the storage section of the wire. Finally, we have proven the efficacy of this system inside an array of 7 nanowires, opening the possibility to use this configuration in a 3D racetrack memory device composed of an array of thousands of nanowires produced by low-cost and high-yield template-electrodeposition methods.

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Section: Bit Movementmentioning

confidence: 99%

A Novel Design of a 3D Racetrack Memory Based on Functional Segments in Cylindrical Nanowire Arrays

Rial

Proença

2020

Nanomaterials

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“…These templates can be used to produce nanowires with a modulated diameter along the longitudinal axis (bamboo-like nanowires) [111][112][113]. The presence of these modulations in the nanowires is expected to have a large impact on the pinning of the domain walls under applied magnetic fields and currents [114], which may fuel the application of these nanowires in spintronics applications.…”

Section: Nanostructuring Electrodeposited Nanowiresmentioning

confidence: 99%

Electrodeposition as a Tool for Nanostructuring Magnetic Materials

2022

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Electrodeposition has appeared in the last year as a non-expensive and versatile technique for the growth of nanomaterials. We review the main characteristics of electrodeposition that make this technique very suitable for its combination with different nanofabrication tools and the possibilities that this combination offers to fabricate nanowires and more complex tridimensional nanostructures. Finally, we overview the present and future impact of electrodeposition on the fabrication of a novel generation of nanomaterials with potential impact in nanomagnetism and spintronics.

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A Material View on Extrinsic Magnetic Domain Wall Pinning in Cylindrical CoNi Nanowires

et al. 2023

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Speed and reliability of magnetic domain wall (DW) motion are key parameters that must be controlled to realize the full potential of DW-based magnetic devices for logic and memory applications. A major hindrance to this is extrinsic DW pinning at specific sites related to shape and material defects, which may be present even if the sample synthesis is well controlled. Understanding the origin of DW pinning and reducing it are especially desirable in electrochemically deposited cylindrical magnetic nanowires (NWs), for which measurements of the fascinating physics predicted by theoretical computation have been inhibited by significant pinning. We experimentally investigate DW pinning in Co x Ni100–x NWs by applying quasi-static magnetic fields. Wire compositions were varied with x = 20, 30, and 40, while the microstructure was changed by annealing or by varying the pH of the electrolyte for deposition. We conclude that pinning due to grain boundaries is the dominant mechanism, decreasing inversely with both the spontaneous magnetization and grain size. Second-order effects include inhomogeneities in lattice strain and the residual magnetocrystalline anisotropy. Surface roughness, dislocations, and impurities are not expected to play a significant role in DW pinning in these wire samples.

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Domain wall pinning in a circular cross-section wire with modulated diameter

Cited by 5 publications

References 48 publications

A Novel Design of a 3D Racetrack Memory Based on Functional Segments in Cylindrical Nanowire Arrays

A Novel Design of a 3D Racetrack Memory Based on Functional Segments in Cylindrical Nanowire Arrays

Electrodeposition as a Tool for Nanostructuring Magnetic Materials

A Material View on Extrinsic Magnetic Domain Wall Pinning in Cylindrical CoNi Nanowires

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