Domain growth dynamics in PMN-PT ferroelectric thin films

Pan, Jiayu; Men, Tian-Lu; Xu, Xingyu; Xu, Ze; Li, Qi; Chu, Xiangcheng; Shen, Yang; Han, Bing; Wang, Ke

doi:10.1007/s10853-019-03563-z

Cited by 3 publications

(2 citation statements)

References 42 publications

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“…[12,35,36] The average activation field E a and creep exponent 𝜇 extracted from fitting are 2.31 ± 0.36 and 0.54 ± 0.03 MV cm -1 , respectively, which are in good agreement with the reported values for epitaxial films. [29,37] Furthermore, it should be noted that the obtained E a and 𝜇 values are susceptible to intrinsic (e.g., local defect density) and extrinsic (e.g., tip abrasion effects and inhomogeneities in the applied field) factors, [26,32,38] thereby averaging over at least a few tens of independent realizations is imperative to achieve statistically more reliable results. Figure 1e prototypically illustrates the statistically analyzed 𝜇 averaged over a total of 16 independent realizations (four sets of comparable data in Figure 1a) along with its histogramic mapping at the background for a 90 nm thick sample.…”

Section: Domain Wall Creep Dynamicsmentioning

confidence: 99%

Ferroelectric Size Effects on Statics and Dynamics of Domain Wall

Kale,

Petraru,

Kohlstedt

et al. 2023

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Domain walls separating differently oriented polarization regions of ferroelectric materials are known to greatly impact nanoscale materials and device functionalities. Though the understanding of size effects in ferroelectric nanostructures has progressed, the effect of thickness downsizing on domain wall scaling behavior has remained unexplored. Using piezoresponse force microscopy, epitaxial BaTiO3 film thickness size (2–90 nm) effects on the critical scaling universality of the domain wall dynamical creep and static roughness exponents including dimensionality is demonstrated. Independently estimated static roughness exponents ranging between 0.34 and 0.28 and dynamical creep exponents transition from 0.54 to 0.22 elucidate the domain wall dimensionality transition from two‐ to quasi‐one‐dimension in the thickness range of 10–25 nm, which is later validated by evaluating effective dimensionality within the paradigm of random‐bond universality. The observed interdimensional transition is further credenced to the compressive strain and long‐range strain–dipolar interactions, as revealed by the structural analyses and additional measurements with modified substrate‐induced strain. These results provide new insights into the understanding of size effects in nanoscale ferroelectricity, paving the way toward future nanodevices.

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Section: Domain Wall Creep Dynamicsmentioning

confidence: 99%

Ferroelectric Size Effects on Statics and Dynamics of Domain Wall

Kale,

Petraru,

Kohlstedt

et al. 2023

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“…For rare earth element doped ferroelectric thin films, a double enhanced dielectric permittivity was obtained in PMN-PT thin films through Pr 3+ ion doping [23]. PMN-PT based thin films also possess many advantages of structure [24], electric and optic properties, such as high transmission [25], high optical damage threshold [20], low material toughness [26], and excellent chemical stability [27], making it as a potential candidate for photoluminescent matrix with RE ions and for optic device integration with powerful conditions. During the photoluminescence process, low energy photons were absorbed while high energy photons were produced.…”

Section: Introduction mentioning

confidence: 99%

Enhanced dielectric, ferroelectric, and optical properties in rare earth elements doped PMN-PT thin films

Zhou

Lin

et al. 2020

J Adv Ceram

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Rare earth (RE = La3+, Sm3+, Pr3+) ion doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (RE-PMN-PT) ferroelectric thin films with compositions near the morphotropic phase boundary were grown on the Pt/TiO2/SiO2/Si(100) substrate using sol-gel/spin coating method. The phase structure, electrical properties, and photoluminescence performance of thin films were investigated systematically. The highly (100)-preferred orientation was obtained in pure perovskite Sm-PMN-0.30PT thin films with an average grain size of 131 nm. After 2.5% Sm3+ doping, the PMN-0.30PT thin films exhibited a triple enhancement of dielectric permittivity with a maximum value of 3500 at 1 kHz, a low dielectric loss of 1.3%, and high remanent polarization of 17.5 μC/cm2 at room temperature. In visible light and near-infrared band, the transmittance rate increased with PT content and showed the highest value of 85% in 2.5%Sm-PMN-0.31PT. In addition, the films presented strong red-orange emission at 599 nm, which was sensitively in temperature range of 248–273 K corresponding to the rhombohedral to monoclinic phase transition temperature.

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Bubble domain evolution in well-ordered BiFeO₃ nanocapacitors

Zhang¹,

Tian²,

Zhao³

et al. 2023

J. Adv. Dielect.

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Ferroelectric nanocapacitors have attracted intensive research interest due to their novel functionalities and potential application in nanodevices. However, due to the lack of knowledge of domain evolution in isolated nanocapacitors, precise manipulation of topological domain switching in the nanocapacitor is still a challenge. Here, we report unique bubble and cylindrical domains in the well-ordered BiFeO3 nanocapacitor array. The transformation of bubble, cylindrical and mono domains in isolated ferroelectric nanocapacitor has been demonstrated via scanning probe microscopy (SPM). The bubble domain can be erased to mono domain or written to cylindrical domain and mono domain by positive and negative voltage, respectively. Additionally, the domain evolution rules, which are mainly affected by the depolarization field, have been observed in the nanocapacitors with different domain structures. This work will be helpful in understanding the domain evolution in ferroelectric nanocapacitors and providing guidance on the manipulation of nanoscale topological domains.

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Domain growth dynamics in PMN-PT ferroelectric thin films

Cited by 3 publications

References 42 publications

Ferroelectric Size Effects on Statics and Dynamics of Domain Wall

Ferroelectric Size Effects on Statics and Dynamics of Domain Wall

Enhanced dielectric, ferroelectric, and optical properties in rare earth elements doped PMN-PT thin films

Bubble domain evolution in well-ordered BiFeO₃ nanocapacitors

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Domain growth dynamics in PMN-PT ferroelectric thin films

Cited by 3 publications

References 42 publications

Ferroelectric Size Effects on Statics and Dynamics of Domain Wall

Ferroelectric Size Effects on Statics and Dynamics of Domain Wall

Enhanced dielectric, ferroelectric, and optical properties in rare earth elements doped PMN-PT thin films

Bubble domain evolution in well-ordered BiFeO3 nanocapacitors

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Bubble domain evolution in well-ordered BiFeO₃ nanocapacitors