Domain (Grain) Boundaries and Evidence of “Twinlike” Structures in Chemically Vapor Deposited Grown Graphene

An, Jinho; Voelkl, E.; Suk, Ji Won; Li, Xuesong; Magnuson, Carl W.; Fu, Liangjie; Tiemeijer, Peter; Bischoff, M.; Freitag, Bert; Popova, E. F.; Ruoff, Rodney S.

doi:10.1021/nn103102a

Cited by 177 publications

(170 citation statements)

References 28 publications

(57 reference statements)

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“…This result indicated that the GaN grains in the thin film had large grain angle boundaries and preferred in-plane orientations. Similar in-plane orientations for CVD graphene films synthesized on Cu foil have previously been reported, [15][16][17] suggesting that the in-plane orientation of GaN results from using the CVD graphene film. Only one set of peaks possessing sixfold symmetry was observed for the f-scan (red solid line) of GaN films grown on an exfoliated graphene layer, indicating that the GaN films were single crystals without large-angle grain boundaries, similar to previous reports.…”

Section: Resultssupporting

confidence: 82%

High-quality GaN films grown on chemical vapor-deposited graphene films

et al. 2012

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We report the growth of high-quality GaN films on large-size graphene films for visible light-emitting diodes (LEDs). The graphene films were synthesized by chemical vapor deposition and then transferred onto amorphous silica (SiO 2 ) substrates that do not have an epitaxial relationship with GaN. Before growing the high-quality GaN thin films, ZnO nanowalls were grown on the graphene films as an intermediate layer. The structural and optical characteristics of the GaN films were investigated, and the films exhibited stimulated emission even at room temperature, a highly c-axis-oriented crystal structure, and a preferred in-plane orientation. Visible LEDs that emitted strong electroluminescence under room illumination were fabricated using the GaN thin films.

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Section: Resultssupporting

confidence: 82%

High-quality GaN films grown on chemical vapor-deposited graphene films

et al. 2012

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“…The growth mechanism may be similar to that for graphene fabricated in argon or disilene environments. 32,33 The height difference between the h-BN and graphene domains is 0.23 nm, and the two domains are atomically connected to each other with the same orientation.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

et al. 2015

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Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD).However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 ℃ using borazine molecules.Second, when heated above 1150 ℃ in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 ℃ , the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.

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“…The usual method for estimating the elastic properties of 2D materials is to transfer the membrane onto a substrate with an array of holes, and apply a force to the membrane through one of the holes with an atomic force microscope (AFM). [150] The first reported measurements indicate that GGBs in CVD-grown graphene significantly lower the elastic constant by a factor of six, [14,173,174] with an average breaking load of about 120nN, an order of magnitude lower than for monocrystalline graphene. [150] The strength of individual GGBs was also found, theoretically and experimentally, to strongly depend on the misorientation angle between graphene domains.…”

Section: Charge Transport In Polycrystalline Graphenementioning

confidence: 99%

Charge and Spin Transport in Disordered Graphene-Based Materials

Tuan

2016

Springer Theses

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Domain (Grain) Boundaries and Evidence of “Twinlike” Structures in Chemically Vapor Deposited Grown Graphene

Cited by 177 publications

References 28 publications

High-quality GaN films grown on chemical vapor-deposited graphene films

High-quality GaN films grown on chemical vapor-deposited graphene films

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Charge and Spin Transport in Disordered Graphene-Based Materials

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