Do we need to recalibrate our strategy in InGaN-on-SiC LED technology given its low efficiency?

A comment on the dependence of LED’s efficiency on the junction ideality factor

“…There are various reports in the literature, which have questioned the direct curve fitting of the Schokley equation to the data. Malyutenko et al [4] suggested an alternative approach of calculating n using the current derivative with respect to the voltage. The Schokley equation for the simplification assumption e q(V−Vc)/nKT 1 (which is valid for appreciable voltages V), reduces to…”

Extracting the Boltzmann constant from a hot diode

“…This 'thermal run-away' is slower in practical conditions since the experiment is done in an 'open system', where cooling by heat loss to a colder ambient takes place, and considering the 'p' and 'n' layers are extrinsic semiconductors, the number of new carriers generated as compared to those available for conduction is insignificant [3]. In all, the temperature (T ), which functionally depends on the square of the current (∝ I 2 ), dominates the contribution from the ideality factor that is proportional only to the current (∝ I) [4] Simulating data for an 'open system', where the device temperature does not 'run-away' on account of cooling, is difficult, however, a 'closed system' can be simulated easily in any spreadsheet. For every new voltage for which the current is to be simulated, first the temperature of the device due to heating is calculated using the value of the previous current in the circuit and the new current is calculated using equation (4).…”