DNA Analysis Chip Based on Field-Effect Transistors

Sakata, Toshiya; Kamahori, Masao; Miyahara, Yuji

doi:10.1143/jjap.44.2854

Cited by 125 publications

(103 citation statements)

References 23 publications

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“…[8,9]). The sensors with seeded cells were set-up in an incubator, and electrical measurement put into practice under cell culturing environment using custom-made real-time analyzer [10]. DMEM (+1% FBS) was used as culture medium.…”

Section: Measurement Under Cell Cultural Environmentmentioning

confidence: 99%

Development of cell/transistor interface for real-time and noninvasive monitoring of potassium ion release based on apoptosis using biologically-coupled field effect transistor

Murakami

Sakata

Matsumoto

et al. 2010

Trans. Mat. Res. Soc. Japan

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We report the real-time and noninvasive detection of K + release through cell membrane using a biologically-coupled field effect transistor (bio-FET). To achieve this purpose, the cell/transistor interface, which can selectively detect K + release through the ion-channel, was developed. The K + release through the ion-channel caused by apoptosis (programmed cell death) could be electrically detected using the bio-FET with crown ether monolayer. Thus we have demonstrated the ability to analyze selectively the ion channel behavior using the bio-FET modified with the functional monolayer.

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Section: Measurement Under Cell Cultural Environmentmentioning

confidence: 99%

Development of cell/transistor interface for real-time and noninvasive monitoring of potassium ion release based on apoptosis using biologically-coupled field effect transistor

Murakami

Sakata

Matsumoto

et al. 2010

Trans. Mat. Res. Soc. Japan

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“…The threshold voltage shift V T was determined after introduction of the substrates into the spheroid-based FET system using a semiconductor parameter analyzer (4155C, Agilent). The time course of the surface potential at the gate surface was monitored during uptake of substrates [16,17]. The gate voltage and the drain current were set to 1 V and 700 µA, respectively.…”

Section: Measurements Of Interface Potentials Of Spheroid-based Fetsmentioning

confidence: 99%

Chondrocyte spheroids on microfabricated PEG hydrogel surface and their noninvasive functional monitoring

Otsuka

Nagamura

Kaneko

et al. 2012

Science and Technology of Advanced Materials

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A two-dimensional microarray of 10 000 (100 × 100) chondrocyte spheroids was constructed with a 100 µm spacing on a micropatterned gold electrode that was coated with poly(ethylene glycol) (PEG) hydrogels. The PEGylated surface as a cytophobic region was regulated by controlling the gel structure through photolithography. In this way, a PEG hydrogel was modulated enough to inhibit outgrowth of chondrocytes from a cell adhering region in the horizontal direction, which is critical for inducing formation of three-dimensional chondrocyte aggregations (spheroids) within 24 h. We further report noninvasive monitoring of the cellular functional change at the cell membrane using a chondrocyte-based field effect transistor. This measurement is based on detection of extracellular potential change induced as a result of the interaction between extracellular matrix protein secreted from spheroid and substrate at the cell membrane. The interface potential change at the cell membrane/gate interface can be monitored during the differentiation of spheroids without any labeling materials. Our measurements of the time evolution of the interface potential provide important information for understanding the uptake kinetics for cellular differentiation.

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“…The detection of DNA hybridization by an FET sensor with a SiN gate insulator has been previously reported. 8,9,11,12,14 However, the preparation of FET sensors with the SiN gate insulator required a silane-coupling method to immobilize the DNA probes on it.…”

Section: Detection Of Dna Hybridization and Extension Reaction By An mentioning

confidence: 99%

“…9,11,12,14 In this case, a silane-coupling method, which has many complicated steps, was applied to immobilize the DNA probes on the SiN surface; this method makes it difficult to control the DNA probe density. 9,11 In addition, the FET sensor with a SiN gate insulator must be operated in a dark environment, such as a lightshielding box, because of its light sensitivity. To solve the above-mentioned problem, we designed an extended-gate FET sensor with a gold-sensing electrode, 13 to which a gold-thiol bond could be applied.…”

Section: Introductionmentioning

confidence: 99%

“…[2][3][4][5][6][7][8][9][10][11][12][13][14] In particular, field-effect-transistor (FET) sensors have been used to electrochemically detect DNA hybridization events on solid surfaces. 3,[8][9][10][11][12][13][14] Since a DNA molecule contains phosphate ions, which are negatively charged in an aqueous solution, the number of negative charges on the gate surface of the FET sensor increases as the result of hybridization and extension reactions.The charge-density change can be directly transduced into an electrical signal by the field effect. The FET sensor can thus detect DNA without labeling.…”

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DNA Detection by an Extended-Gate FET Sensor with a High-Frequency Voltage Superimposed onto a Reference Electrode

2007

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IntroductionDNA chips are playing important roles in molecular biology, pharmaceutical research, and clinical applications. While most DNA chips use fluorescence detection, 1 many types of solidstate biosensors have been developed by combining biotechnology and semiconductor technology. [2][3][4][5][6][7][8][9][10][11][12][13][14] In particular, field-effect-transistor (FET) sensors have been used to electrochemically detect DNA hybridization events on solid surfaces. 3,[8][9][10][11][12][13][14] Since a DNA molecule contains phosphate ions, which are negatively charged in an aqueous solution, the number of negative charges on the gate surface of the FET sensor increases as the result of hybridization and extension reactions.The charge-density change can be directly transduced into an electrical signal by the field effect. The FET sensor can thus detect DNA without labeling. Based on this principle, not only DNA hybridization detection, but also single-nucleotide polymorphism analysis, 8,12 has been carried out by using the FET sensor. Moreover, the charge-density change on a silicon-nitride (SiN) gate surface caused by singlebase extension could be measured as a shift in the gate voltage. 14 This result indicates that it is possible to realize labelfree DNA sequencing based on the intrinsic charges of DNA molecules. The DNA hybridization efficiency is affected by the immobilization procedure for the DNA probes on the sensing surface of the FET sensor. Generally, FET sensors with a SiN gate insulator are used for DNA detection. 9,11,12,14 In this case, a silane-coupling method, which has many complicated steps, was applied to immobilize the DNA probes on the SiN surface; this method makes it difficult to control the DNA probe density. 9,11 In addition, the FET sensor with a SiN gate insulator must be operated in a dark environment, such as a lightshielding box, because of its light sensitivity. To solve the above-mentioned problem, we designed an extended-gate FET sensor with a gold-sensing electrode, 13 to which a gold-thiol bond could be applied. The use of the gold electrode enabled us to immobilize DNA probes on the gold surface by simply spotting a DNA-probe solution. Since the gold electrode is located in a different area from the FET, it can be operated without a light-shielding box by masking only the FET. However, when the FET sensor with the gold electrode is used in an aqueous solution, fluctuation of the interface potential on the gold surface occurs, resulting in decreased sensitivity. To improve the sensitivity by reducing the fluctuation, we propose a measurement technique using a highfrequency voltage superimposed onto a reference electrode of the FET sensor. The fundamental characteristics of the FET sensor with the superimposed high-frequency voltage were measured as a change in the drain current of the FET sensor after dipping it into the aqueous solution. With a superimposed high-frequency voltage of over 1 kHz, the time required to stabilize the drain current of the FET sensor was not only s...

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DNA Analysis Chip Based on Field-Effect Transistors

Cited by 125 publications

References 23 publications

Development of cell/transistor interface for real-time and noninvasive monitoring of potassium ion release based on apoptosis using biologically-coupled field effect transistor

Development of cell/transistor interface for real-time and noninvasive monitoring of potassium ion release based on apoptosis using biologically-coupled field effect transistor

Chondrocyte spheroids on microfabricated PEG hydrogel surface and their noninvasive functional monitoring

DNA Detection by an Extended-Gate FET Sensor with a High-Frequency Voltage Superimposed onto a Reference Electrode

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