Dlts Analysis of Radiation-Induced Defects in InGaAsN Solar Cell Structures

Impact of 1 MeV proton irradiation on InGaAsN solar cells

“…Measuring the radiation sensitivity of InGaAsN towards space representative irradiation is then essential to evaluate the end of life (EOL) efficiency of the MJSC. While several studies reported the effect of electron irradiation on InGaAsN solar cells [9,[11][12][13], the impact of protons was only investigated for lattice-mismatched dilute nitrides with very low nitrogen content (<0.5%) [14,15]. In order to fill this lack in the literature and quantify the radiation hardness of InGaAsN towards proton irradiation, we propose a study combining device characterization (I-V and external quantum efficiency (EQE) measurements) with material characterization (photoluminescence (PL) and deep-level transient spectroscopy (DLTS) measurements).…”

Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

“…Several degradation studies have already been reported for InGaAsN cells but the irradiations were carried out on nonoptimized cells (regarding both the material and the architecture) grown by metal organic vapor phase epitaxy (MOVPE) [8], [9], [10]. More recent studies reported on quasioptimized structures achieving short-circuit current density (Jsc) higher than 15 mA/cm² under integrated illumination condition (AM0 > 870 nm [11] and AM1.5 > 830 nm [12]).…”