Diverse Atomically Sharp Interfaces and Linear Dichroism of 1T' ReS₂‐ReSe₂ Lateral p–n Heterojunctions

Abstract

Creating heterojunctions between different 2D transition-metal dichalcogenides (TMDs) would enable on-demand tuning of electronic and optoelectronic properties in this new class of materials. However, the studies to date are mainly focused on hexagonal (2H) structure TMD-based heterojunctions, and little attention is paid on the distorted octahedral (1T') structure TMD-based heterojunctions. This study reports the large-scale synthesis of monolayer 1T' ReS 2 -ReSe 2 lateral heterojunction with domain size up to 100 µm by using two-step epitaxial growth. Atomic-resolution scanning transmission electron microscopy reveals high crystal quality of the heterojunction with atomically sharp interfaces. Interestingly, three types of epitaxial growth modes accompanying formation of three different interface structures are revealed in the growth of 1T' heterojunction, where the angle between the b-axis of ReS 2 and ReSe 2 is 0°, 120°, and 180°, respectively. The 0° and 180° interface structures are both found to be more abundant than the 120° interface structure owing to their relative lower formation energy. Electrical transport demonstrates that the as-grown heterostructure forms lateral p-n junction with intrinsic rectification characteristics and exhibits polarization-dependent photodiode properties. This is the first time the linear dichroism is achieved in 2D lateral heterostructure, which is important for the development of new devices with multi-functionality.

Emerging in‐plane anisotropic two‐dimensional materials

“…They found that the TaIrTe 4 ‐based photodetector can work over a broadband wavelength regime from 532 to 10.6 μm, and anisotropy ratio can reach 1.88 for mid‐infrared 10.6 μm, as shown in Figure G. Recently, Xu and coworkers for the first time demonstrated polarization‐dependent photodiode based on ReS 2 ‐ReSe 2 lateral heterostructure . The observed unusual linear dichroism with heterojunction grown under different grouth modes, which may open up new chances for multifunctional optoelectronic devices .…”

“…Recently, Xu and coworkers for the first time demonstrated polarization‐dependent photodiode based on ReS 2 ‐ReSe 2 lateral heterostructure . The observed unusual linear dichroism with heterojunction grown under different grouth modes, which may open up new chances for multifunctional optoelectronic devices . The anisotropic photodetectors by fabricating anisotropic electrodes have been reported on b‐AsP, SnS, Sb 2 Se 3 , and GeP .…”

Electronic and Optoelectronic Applications Based on ReS2

“…Liu et al adopted two step epitaxial growth to synthesize monolayer 1T' ReS 2 ‐ReSe 2 lateral heterojunction with domain size up to 100 µm. The heterojunction had high crystal quality with atomically sharp interfaces.…”

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI3/Sb2O3 van der Waals Heterostructure

“…For example, the photocurrent anisotropy ratio of polarization‐sensitive photodetector based on pure BP was 3.5, while the photocurrent anisotropy ratio of the device increased to 6 and even 10.76 by constructing the BP/ReSe 2 and BP/InSe heterostructure photodetectors, respectively . Further results indicated that fabricating heterostructure could be a desirable and effective method to improve the in‐plane anisotropy by symmetry‐reduction in low‐dimensional materials . However, BP, BP‐based heterostructures and numerous 2D anisotropy semiconductors have relatively narrow bandgap, and complicated optical systems are required to regulate them within the desirable short spectral range.…”