Distribution and shape of self-assembled InAs quantum dots grown on GaAs (001)

Abstract

Grazing incidence small angle X-ray scattering (GISAXS) and atomic force microscopy (AFM) experiments are employed to study self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on GaAs (001). The GISAXS spectra show pronounced non-specular diffuse scattering satellite peaks with high diffraction orders up to

One- and two-phonon capture processes in quantum dots

“…The dots' shape is in many cases believed to be a truncated pyramid, 28 coupled to a common two-dimensional layer; the wetting layer. Carriers are captured into the dots primarily via this 2D layer.…”

The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (100) GaAs

“…The SK growth mode is characterized by the formation of coherent 3D InAs films and islands, after the layer-by-layer deposition of 1-2 monolayers (ML), which grow pseudomorphically up to a critical size [10]. The evolution of pseudomorphic InAs islands on GaAs (1 0 0) with sizes of a few tens of nm (quantum dots (QDs)) has been studied in detail [11][12][13][14][15]. The early stages of strain relaxation in the QD structures have been studied and some strain relaxation mechanisms are identified [16,17].…”

InAs growth and development of defect microstructure on GaAs

“…The lattice-mismatch derived strain leads to a Stranski-Krastanov (SK) growth mode of InAs on GaAs under As-rich growth conditions 11.133 in both MBE and MOVPE [1]. The evolution of pseudomorphic InAs islands on GaAs (1 0 0) with sizes of a few tens of nanometers (quantum dots, QDs) has been studied in detail [2][3][4][5][6][7][8].The strain relaxation phenomena occurring at early stages of growth in these uncoalesced InAs islands strongly affect the defect structure of the coalesced thin films. The misfit dislocation (MD) structure in InAs islands and films grown by MOVPE, as studied by HRTEM [9], includes the presence of 901 pure edge dislocations in the InAs/GaAs interface, as well as 601 mixed dislocations just above the interface.…”